RF MEMS switches with sic microbridges for improved reliability

Scardelletti, Maximilian C.; Zorman, Christian A.; Oldham, Daniel R.

doi:10.1109/aps.2008.4619927

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…As expected, the shorter the beam, the larger the measured breakdown voltage, since the effective mechanical stiffness is greater and the electrode length is smaller. The measured breakdown correlates well with the theoretically predicted trends from (15); however, the spread in the measurements is large. This, along with the premature breakdown of the short 100-nm-gap resonators, is most likely due to topographical effects causing the nonuniform coverage of the thin polyimide sacrificial layer.…”

Section: A Breakdown Voltagesupporting

confidence: 69%

Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Nabki

Cicek

Dusatko

et al. 2011

J. Microelectromech. Syst.

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Microelectromechanical beam resonators and arrays are fabricated using a custom low-temperature complementarymetal-oxide-semiconductor-compatible silicon carbide microfabrication process, detailed in Part I of this paper. Theoretical aspects are presented with modal analysis and numerical methods. Measurements of the resonant frequency, the quality factor, the transmission, and the tuning characteristics are presented for different device types and dimensions. Trends are analyzed, and performance metrics dependences are investigated. A tuning method based on integrated heaters is introduced and tested, yielding a very desirable constant insertion-loss tuning and a wide tuning range. Quality factors of up to 1493 and resonant frequencies of up to 26.2 MHz are demonstrated. Both the Young's modulus and the residual stress of the SiC film are extracted (261 GPa and < ±30 MPa, respectively), and favorably compare to values reported for polysilicon. [2010-0235] Index Terms-Micromechanical resonators, microelectromechanical systems (MEMS), resonator arrays, silicon carbide (SiC), surface micromachining, thermal tuning.

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Section: A Breakdown Voltagesupporting

confidence: 69%

Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Nabki

Cicek

Dusatko

et al. 2011

J. Microelectromech. Syst.

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“…This work focuses on capacitive switches, because they avoid metal-to-metal welding in high power applications [12]. With the developed technology, switches with either series or shunt topologies may be built, as illustrated in Fig.…”

Section: Switch Design Methodology a Topologiesmentioning

confidence: 99%

Low actuation voltage silicon carbide RF switches for MEMS above IC

Cicek

Mahdavi

Nabki

et al. 2009

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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This paper presents a CMOS-compatible RF MEMS technology to build low actuation voltage switches. SiC increases the stiffness of the switches to improve reliability and durability. A design methodology is introduced to optimize tradeoffs between important system criteria, i.e., voltage levels, signal performance and switching speed. Simulations are used to evaluate devices designed with the technology.

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“…The Young's modulus of Au is similar to that of Al and much smaller than that of Cu. Consequently, the stiffness of the cantilever made by Au will be lower fulfilling the requirement for lower pull down voltages of the cantilever (Scardelletti et al 2008). The pull down voltage of the switch must be as low as possible and it depends on the dimensions of the cantilever (length and height), the distance from the electrode and the stiffness of the gold.…”

Section: The Mems Switchmentioning

confidence: 95%

Design of MEMS switch for RF applications

Muniraj

Sathesh

2011

Microsyst Technol

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In this paper the design and modeling of capacitive shunt switch for k-ka band applications is presented. The proposed model for this design is the crab leg flexure. In order to reduce the squeeze film air damping, the perforated switch with reduced spring constant is designed. Analysis of designed switch has been carried out on the various parameters of the switch such as damping factor, switching time, quality factor and Eigen frequencies in order to design a reliable switch. The results indicate that the obtained pull in voltage is 3.1V for the dielectric gap of 1m and spring constant of 2.95N/m 2. Switching time is observed as 1.2s and 2.15s for the gap of 1m and 1.5m respectively. The capacitance ratio i.e. Cdown/Cup C down C up is 211.11 for HfO2 and 100.741 for Si3N4. Resonant frequency is obtained as 14.45 KHz. Return loss is calculated as-44.85dB at a frequency of 1GHz and-25.68dB at a frequency of 27.5GHz and insertion loss is obtained as-0.0447db at 1GHz and-1.0379dB at 27.5GHz. The maximum peak isolation is observed as-59.5dB at 1GHz frequency and-71dB at 27.5GHz frequency.

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RF MEMS switches with sic microbridges for improved reliability

Cited by 10 publications

References 4 publications

Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Low actuation voltage silicon carbide RF switches for MEMS above IC

Design of MEMS switch for RF applications

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