RF power handling of capacitive RF MEMS devices

Pillans, B.; Kleber, J.; Goldsmith, C. Franklin; Eberly, M.

doi:10.1109/mwsym.2002.1011623

Cited by 61 publications

(34 citation statements)

References 6 publications

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“…When we designed a simple switch RF-MEMS switch in HFSS software, the result of reflection coefficient was ascending curve along the X-axis. The result of this switch ( Figure 5) is exactly in accordance with existing standards of literature [10,11] which ensures that our approach was accurate. As shown in the graph above, at lower frequencies like between 1.5 GHz to 4 GHz, the reflection was good.…”

Section: Return Loss Of On Statesupporting

confidence: 85%

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Riaz¹,

Sindhu²,

Zaidi³

2018

Adv. sci. technol. eng. syst. j.

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Section: Return Loss Of On Statesupporting

confidence: 85%

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Riaz¹,

Sindhu²,

Zaidi³

2018

Adv. sci. technol. eng. syst. j.

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“…In electrostatically actuated shunt capacitive switches, the limitation on RF power handling comes mainly from the mechanisms of self-switching (in the case of cold switching) and RF latching (in the case of hot switching) [12]- [16]. So far, several topologies and solutions have been proposed in literature to improve the RF power handling [12], [13], [35].…”

Section: Rf Power Handlingmentioning

confidence: 99%

“…A measurement setup based on the systems proposed for RF power handling measurement in electrostatically actuated switches [13], [16] was used to characterize the effects of the RF power on the devices. Fig.…”

Section: Rf Power Handlingmentioning

confidence: 99%

“…This subject is addressed in some works in literature for the case of electrostatic actuation, mainly in capacitive shunt devices, where the limitations are derived from the effects of self-switching, RF latching, and dielectric charging [13]- [16]. The structure proposed in this paper provides complete independence between the actuation and the RF signal.…”

Section: Introductionmentioning

confidence: 99%

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Electrothermally Actuated RF MEMS Switches Suspended on a Low-Resistivity Substrate

Girbau

Pradell

Lázaro

et al. 2007

J. Microelectromech. Syst.

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Abstract-This paper presents an electrothermally actuated lateral resistive-contact switch for application to low-gigahertz-band communication systems. It was manufactured on a standard low-resistivity substrate, and its RF performance was improved by suspending the structures 25 µm from the substrate, which is a strategy for future integration with active devices in the system-on-chip concept. Measured insertion losses are −0.26 dB at 1 GHz and −0.65 dB at 6 GHz, return losses are −29 dB at 1 GHz and −25 dB at 6 GHz, and isolations are −52 dB at 1 GHz and −26 dB at 6 GHz. The device is driven by a metal electrothermal actuator, which achieves large displacements and contact forces at much lower temperatures than traditional polysilicon electrothermal actuators. The RF power handling characteristics are also addressed and measured.[ 2007-0051]Index Terms-Electrothermal actuator, low-resistivity substrate, microelectromechanical systems (MEMS) switch, system on chip.

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“…If the RF power is large enough, this force can induce self-actuation, which actuates the switch to contact-state [1]. When a certain actuation voltage is applied, the RF voltage exerts an extra force to the movable electrode, which can act as holding voltage or even actuate the switch [22,114]. RF power also influences the device reliability by heating.…”

Section: Rf Signal Related Reliability Issues: Power Handling and Heamentioning

confidence: 99%

Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

Wang¹

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RF power handling of capacitive RF MEMS devices

Cited by 61 publications

References 6 publications

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Electrothermally Actuated RF MEMS Switches Suspended on a Low-Resistivity Substrate

Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

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