Robust electrical spin injection into a semiconductor heterostructure

Jonker, B. T.; Park, Y. D.; Bennett, B. R.; Cheong, H. D.; Κιοσέογλου, Γ.; Petrou, A.

doi:10.1103/physrevb.62.8180

Cited by 489 publications

(315 citation statements)

References 18 publications

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“…The distribution of Mn is that of Sec. IV, with ⌬ϭ0.5 nm, pϭ1.3ϫ10 13 barrier potential increases, the hole distribution overlaps more the Mn layer, increasing the T C . In Fig.…”

Section: Digital Layer Inside a Quantum Wellmentioning

confidence: 99%

“…1 we plot the self-consistent potential for the holes corresponding to a single digital layer with ⌬ϭ0.5 nm and pϭ1.3ϫ10 13 cm Ϫ2 , together with the energy levels for the light and the heavy holes. In the right panel we plot the subbands for the in-plane motion of the 19 The spin-orbit interaction causes both the anticrossing and the nonparabolic shape of the hole subbands.…”

Section: Single Digital Layermentioning

confidence: 99%

“…054. Progress in ''spintronics'' is made by the recent demonstrations of the injection of a spin-polarized current from both ferromagnetic metals [8][9][10][11] and magnetic semiconductors 12,13 into a semiconductor.…”

Section: Introductionmentioning

confidence: 99%

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Theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

Fernández-Rossier

Sham

2001

Phys. Rev. B

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A density-functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density-functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V semiconductors doped with manganese atoms. The mean-field, virtual-crystal and effective-mass approximations are adopted to calculate the electronic structure, including the spin-orbit interaction, and the magnetic susceptibilities, leading to the Curie temperature. By means of these results, we attempt to understand the observed dependence of the Curie temperature of planar ␦-doped ferromagnetic structures on variation of their properties. We predict a large increase of the Curie temperature by additional confinement of the holes in a ␦-doped layer of Mn by a quantum well.

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“…The distribution of Mn is that of Sec. IV, with ⌬ϭ0.5 nm, pϭ1.3ϫ10 13 barrier potential increases, the hole distribution overlaps more the Mn layer, increasing the T C . In Fig.…”

Section: Digital Layer Inside a Quantum Wellmentioning

confidence: 99%

Section: Single Digital Layermentioning

confidence: 99%

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Theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

Fernández-Rossier

Sham

2001

Phys. Rev. B

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“…In this experiment we utilized the optical emission from an AlGaAs/GaAs-based quantum well light emitting diode (LED) 9 to measure the spin polarization of electrons in the quantum well which were electrically injected from a reverse biased Fe Schottky contact. The experiment was done in the Faraday geometry, shown in Fig.…”

Section: ) ↓mentioning

confidence: 99%

Spin nomenclature for semiconductors and magnetic metals

Jonker¹,

Hanbicki²,

Pierce³

et al. 2004

Journal of Magnetism and Magnetic Materials

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The different conventions used in the semiconductor and magnetic metals communities can cause confusion in the context of spin polarization and transport in simple heterostructures. In semiconductors, terminology is based on the orientation of the electron spin, while in magnetic metals it is based on the orientation of the moment. In the rapidly expanding field of spintronics, where both semiconductors and metallic metals are important, some commonly used terms ("spin-up," "majority spin") can have different meanings. Here, we clarify nomenclature relevant to spin transport and optical polarization by relating the common physical observables and "definitions" of spin polarization to the fundamental concept of conservation of angular momentum within a well-defined reference frame.

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“…Most of the current research towards realizing spin dependent semiconductor devices is focused in two areas: injecting spin polarized electrons from ferromagnets [4][5][6][7] or diluted magnetic semiconductors [8][9][10] into a semiconductor, or doping a semiconductor with a magnetic impurity [11][12][13]. Both efforts involve dealing with the physics of the bulk semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Manganese nanoclusters and nanowires on GaAs surfaces

Mochena

Lin‐Chung

2003

Phys. Rev. B

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We have computed the local magnetic moments of manganese and neighboring arsenic for various cluster configurations on the (001) surface of GaAs bulk crystal using a cluster of 512 atoms. We obtained for manganese a substantial local magnetic moment of 3 66 01 . . ± µ B for all cases considered. The induced magnetic moment of arsenic is less than that of manganese by two orders of magnitude and falls off drastically beyond nearest neighbor distance. A small amount of charge is transferred from the manganese to arsenic atom. The possibility of a spin polarized wire channel on the arsenic layer below the surface is suggested.2

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Robust electrical spin injection into a semiconductor heterostructure

Cited by 489 publications

References 18 publications

Theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

Theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

Spin nomenclature for semiconductors and magnetic metals

Manganese nanoclusters and nanowires on GaAs surfaces

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