2004
DOI: 10.1016/j.jmmm.2003.09.051
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Spin nomenclature for semiconductors and magnetic metals

Abstract: The different conventions used in the semiconductor and magnetic metals communities can cause confusion in the context of spin polarization and transport in simple heterostructures. In semiconductors, terminology is based on the orientation of the electron spin, while in magnetic metals it is based on the orientation of the moment. In the rapidly expanding field of spintronics, where both semiconductors and metallic metals are important, some commonly used terms ("spin-up," "majority spin") can have different … Show more

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Cited by 22 publications
(15 citation statements)
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“…It measures the excess of carriers or current density of the majority spin over the minority spin as fraction of the total number of carriers (see Ref. [18] for cautionary notes on the use of these terms). When a current flows, P is therefore the ratio of the spin current I s to the charge current I, so I s = P (µ B /e)I.…”
Section: Spin-polarised Currentsmentioning
confidence: 99%
“…It measures the excess of carriers or current density of the majority spin over the minority spin as fraction of the total number of carriers (see Ref. [18] for cautionary notes on the use of these terms). When a current flows, P is therefore the ratio of the spin current I s to the charge current I, so I s = P (µ B /e)I.…”
Section: Spin-polarised Currentsmentioning
confidence: 99%
“…3 These experiments were carried out at a reverse bias of ~2 − V across the Fe/GaAs Schottky barrier and injected spins were identified as iron majority spins. 25 Also for lateral Fe/GaAs/Fe devices majority spin injection was observed for U 0.2V < − . 26 In summary our experiments suggest that the band structure matching at an epitaxial Fe/GaAs interface causes bias dependent switching of the TMR effect in Fe/GaAs/Fe tunneling elements.…”
mentioning
confidence: 95%
“…3 These experiments were carried out at a reverse bias of ~2 − V across the Fe/GaAs Schottky barrier and injected spins were identified as iron majority spins. 25 Also for lateral Fe/GaAs/Fe devices majority spin injection was observed for U 0.2V < −…”
mentioning
confidence: 96%
“…2(b)]. At large positive magnetic fields, the magnetization M is aligned parallel with the spin polarization σ yielding a larger voltage 18 than in the antiparallel state where the Co magnetization is antiparallel relative to σ. Upon inverting the current bias to -100 µA, thereby inverting the spin polarization in the channel, an opposite switch in the voltage is obtained, indicating that the spin polarization in the channel is indeed reversed in accordance with the surface state spin texture [Fig.…”
mentioning
confidence: 99%