Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAM

Han, Geonhui; Seo, Jongseon; Kim, Hye-Jin; Lee, Daeseok

doi:10.1039/d2tc05552j

Cited by 6 publications

(6 citation statements)

References 63 publications

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“…The set process in the positive bias and the reset process in the negative bias are observed. Switching behavior occurred in the WO

layer depending on the mobile oxygen ions between WO

and TaO

layers [ 35 , 38 ]. When the positive bias was applied to the TE, the oxygen ions in the WO

layer moved to the TaO

layer.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the W element in the TaO

region and the Ta element in the WO

region may overlap. The fabrication processes were based on 8 inch wafer-based CMOS fabrication processes; more details are described in reference [ 35 ]. All electrical measurements were conducted using a semiconductor parameter analyzer (HP 4156A) and a pulse generator (Agilent 81110A).…”

Section: Methodsmentioning

confidence: 99%

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Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Kim,

Han,

Cho

et al. 2024

Nanomaterials

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A synaptic device with a multilayer structure is proposed to reduce the operating power of neuromorphic computing systems while maintaining a high-density integration. A simple metal–insulator–metal (MIM)-structured multilayer synaptic device is developed using an 8-inch wafer-based and complementary metal–oxide–semiconductor (CMOS) fabrication process. The three types of MIM-structured synaptic devices are compared to assess their effects on reducing the operating power. The obtained results exhibited low-power operation owing to the inserted layers acting as an internal resistor. The modulated operational conductance level and simple MIM structure demonstrate the feasibility of implementing both low-power operation and high-density integration in multilayer synaptic devices.

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“…The set process in the positive bias and the reset process in the negative bias are observed. Switching behavior occurred in the WO

layer depending on the mobile oxygen ions between WO

and TaO

layers [ 35 , 38 ]. When the positive bias was applied to the TE, the oxygen ions in the WO

layer moved to the TaO

layer.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the W element in the TaO

region and the Ta element in the WO

Section: Methodsmentioning

confidence: 99%

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Kim,

Han,

Cho

et al. 2024

Nanomaterials

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“…However, the oxygen ions of the oxygen reservoir can move back to the channel layer because of the concentration difference between the oxygen reservoir and channel layers. [ 25 ] This behavior is known as the self‐diffusion effect, and it can affect to the retention characteristic of the Ox‐ECRAM.…”

Section: Resultsmentioning

confidence: 99%

“…c,d) Weight-update curve of the potentiation/depression properties for double 1 and double 2. [(c) is reproduced from Ref [25]. with permission from the Royal Society of Chemistry.]…”

mentioning

confidence: 99%

Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance

Kim

Han

Seo

et al. 2023

Adv Elect Materials

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This study investigates the impact of an oxygen reservoir layer on the performance of three-terminal (3T) oxide ion-based electrochemical random access memory (Ox-ECRAM). Three Ox-ECRAM synapse devices are compared: single layer, double 1, and double 2. The results indicate that the oxygen reservoir layer is crucial for maintaining channel conductance while preventing gate leakage. The oxygen reservoir layer also modulates conductance via the absorption and supply of oxygen ions. In addition, the ion migration barrier energy of the oxygen reservoir layer plays a key role in the reliability of the Ox-ECRAM, with higher values leading to more stable retention and endurance. The results of this study highlight the importance of the oxygen reservoir layer in Ox-ECRAM performance.

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“…First, the source and drain electrodes are formed in parallel on a twolayer structure, whereas the gate is structured vertically in a 3D configuration. [17,18,21,27,28] This structure offers additional advantages in terms of fast operation speed due to its nm-scale active switching region. However, it still has limitations regarding device density and multi-layer stacking, because at least three layers (i.e., source electrode, isolation layer, drain electrodes) are required to form a single ECRAM device.…”

Section: Introductionmentioning

confidence: 99%

3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS₂ Electrode for High‐Density Neuromorphic Systems

Lee,

Hwang,

Kim

et al. 2024

Adv Funct Materials

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Ion‐based electrochemical random‐access memory (ECRAM) is proposed for synaptic applications owing to its promising characteristics that have the potential to accelerate data processing through neuromorphic systems. However, attaining ideal synaptic functionalities and constructing high‐density vertical synapse arrays are challenging due to issues related to uncontrolled ion migration and constraints in 3D multi‐stacking. Here, a breakthrough using 3D stackable Li ion‐based vertical‐sensing ECRAM (VS‐ECRAM) is presented with an ion‐permeable ultrathin WS2 electrode synthesized through low‐temperature (200 °C) atmospheric‐pressure plasma‐enhanced chemical vapor deposition (AP‐PECVD). The direct AP‐PECVD of the WOx channel layer induces WS2 formation in the surface region, which exhibits sufficient electrical conductivity to function as an electrode. By utilizing the WS2 electrode as an ion‐barrier layer in the VS‐ECRAM synapse, excellent weight update linearity and cycling variability are achieved due to the finely controlled ion migration. Furthermore, a two‐layer stacked 3D VS‐ECRAM is successfully fabricated through the vertical WS2 formation, and independent weight updates without any disturbance are confirmed. Finally, a high pattern recognition accuracy of 95.22% is obtained using a multi‐layer perceptron‐based neural network. Therefore, the proposed 3D stackable WS2‐based VS‐ECRAM exhibits a strong potential for application in high‐density neuromorphic devices with excellent synaptic performances.

show abstract

Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAM

Abstract: Vertical three-terminal electrochemical random access memory (ECRAM) is developed to demonstrate the feasibility of high-density integration and mass production. Improved retention was obtained by investigation of role of the electrolyte layer.

Cited by 6 publications

References 63 publications

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance

3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS₂ Electrode for High‐Density Neuromorphic Systems

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Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAM

Abstract: Vertical three-terminal electrochemical random access memory (ECRAM) is developed to demonstrate the feasibility of high-density integration and mass production. Improved retention was obtained by investigation of role of the electrolyte layer.

Cited by 6 publications

References 63 publications

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance

3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS2 Electrode for High‐Density Neuromorphic Systems

Contact Info

Product

Resources

About

3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS₂ Electrode for High‐Density Neuromorphic Systems