Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

Optical and structural properties of polycrystalline 3C-SiC films

“…8 Those results indicate that addition of particular amount of F radicals as an effective etchant for Si atoms can increase the crystallinity of this film by etching of undesirable bonds and enhancement in SiC bond formation. To investigate the origin of such peak, we prepared some poly-SiC samples with various structures.…”