Room temperature operation of 1.55.MU.m wavelength-range GaN/AlN quantum well intersubband photodetectors

Uchida, Hiroyuki; Matsui, Satoshi; Holmström, Petter; Kikuchi, Akihiko; Kishino, Katsumi

doi:10.1587/elex.2.566

Cited by 7 publications

(6 citation statements)

References 8 publications

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“…Recently, high-power (>100 lm/W) vertical LEDs using a metallic alloy substrate were announced by SemiLEDs Corp. Metallic substrates can also act as reflectors that improve the LED performance by increasing the light extraction efficiency. The infrared range below 1.6 eV is particularly important in this respect because nitride semiconductors can be used as quantum well intersubband photodetectors that operate at wavelengths of interest to optical communications .…”

Section: Introductionmentioning

confidence: 99%

“…The infrared range below 1.6 eV is particularly important in this respect because nitride semiconductors can be used as quantum well intersubband photodetectors that operate at wavelengths of interest to optical communications. 6 Recently we presented spectroscopic ellipsometry data for ZrB 2 films on Si covering the 0.2-8.8 eV energy range. 4 Prior to that work, the only available optical data for this material was the work of Oda and Fukui, covering the 1.4-25 eV energy range, 7 but excluding the relevant low-energy IR range (<1.4 eV).…”

Section: Introductionmentioning

confidence: 99%

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Thermoelastic and Optical Properties of Thick Boride Templates on Silicon for Nitride Integration Applications

Roucka

D'Costa

et al. 2008

Chem. Mater.

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We present a comparative study of the structural, thermoelastic, and optical properties of ZrB2 films grown on silicon with the corresponding bulk ZrB2 behavior. Thick ZrB2 films (up to 500 nm) with device quality morphological and structural properties were grown on Si(111) for potential integration of GaN with Si substrates. HR-XRD was used to analyze the thickness and temperature dependence of the films’ strain state. The data indicate that at room temperature a residual tensile strain of ∼0.5% persists in all samples independent of thickness. When the films are heated back to the growth temperature of 900 °C, two distinct behaviors are observed: thinner films (∼200 nm) follow the thermal expansion of the Si substrate, which results in a tensile strain at the growth temperature. Thicker films (∼400 nm) are fully relaxed at 900 °C and thus decoupled from the substrate. These strain behaviors imply that hybrid ZrB2/Si(111) templates are better matched to GaN than any other known substrate. Comparison of the mismatch strains between sapphire, SiC, and bulk ZrB2 substrates with GaN films over a broad temperature range (20–900 °C) illustrates the superior structural and thermal characteristics of hybrid ZrB2/Si(111) templates for nitride integration. Measurements of the ZrB2 dielectric function ϵ(ω) and its reflectivity R(ω) were conducted in the 0.2–7 eV range on thin films and compared for the first time with density functional theory simulations. The dielectric function displays a typical metallic Drude behavior across the wide IR range, with a reflectivity approaching unity at the operational wavelengths of GaN-based intersubband devices. The characteristic Drude plasma energy and lifetimes are compared with those obtained from transport measurements in the isostructural MgB2 analogue. A detailed electronic structure analysis is also used to identify the interband transitions responsible for characteristic features observed at 2.5, 4.3, and 5.7 eV in the spectrum. Collectively our studies pave the way for understanding key optical and thermoelastic design parameters in novel conductive and reflective buffer layers for improved performance in nitride LEDs, fully integrated with silicon.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermoelastic and Optical Properties of Thick Boride Templates on Silicon for Nitride Integration Applications

Roucka

D'Costa

et al. 2008

Chem. Mater.

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“…This is almost an order of magnitude shorter than that of other semiconductors. Therefore, GaN/AlN multiple quantum wells (MQWs) are promising candidates for developing ultrafast all-optical switches operating at Tbit/s (although the required pulse energy is still high at ∼10 pJ [6]), as well as quantum-well infrared photodetectors (QWIPs) [7]. Intersubband based electroabsorption modulators are showing attractive properties such as negative chirp and insensitivity to saturation.…”

Section: Introductionmentioning

confidence: 99%

Intersubband absorption at 1.5–3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Liu

Holmström

Jänes

et al. 2007

Physica Status Solidi (b)

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Ten and twenty period multiple quantum well structures with 1.5 -5.4 nm GaN wells and 1.2 -5.1 nm AlN barriers were grown on sapphire by molecular beam epitaxy. Layer thicknesses were determined by X-ray diffraction measurements and simulations. Reciprocal space mapping showed that the relaxation of the quantum well layers was independent of the buffer layer thickness. Intersubband absorption was observed by Fourier transform infrared spectroscopy at λ ~ 1.5 -3.5 µm. Monolayer fluctuations in the quantum well width induced multiple peaks in spectra, which were well fitted to Lorentzian peaks of only 57 meV linewidth. Samples were very homogeneous as the absorption peak energy varied less than 1% along ~4 cm on 2 inch wafers. The intersubband transition energies were calculated considering the conduction-band nonparabolicity, built-in fields, strain, and many-body effects. The calculation and comparison to the fitted Lorentzian peak energies indicated a moderate blueshift due to many-body effects. It was shown by both experiments and calculations that the AlN barrier width affects the intersubband transition energy.

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“…These transitions were reported for the GaN hexagonal structures [8][9][10][11][12][13][14] and most recently, in a nonpolar cubic GaN structure. 16 Photodetectors based on the intersubband transitions in the hexagonal GaN / AlN multiple quantum wells were reported with the emphasis on the wavelength of 1.5 m. [9][10][11][17][18][19][20][21][22][23] However, mid-and near-infrared photodetectors based on cubic GaN / AlN quantum wells were not reported. On the other hand, spontaneous polarization that causes the piezoelectric effect almost does not exist in cubic GaN and cubic AlN.…”

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confidence: 99%

Cubic GaN∕AlN multiple quantum well photodetector

DeCuir

Manasreh

Tschumak

et al. 2008

Applied Physics Letters

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Articles you may be interested inCorrelation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect J. Appl. Phys. 98, 044510 (2005); 10.1063/1.2006990 GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Appl. Phys. Lett. 83, 572 (2003); 10.1063/1.1594265 Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures

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Room temperature operation of 1.55.MU.m wavelength-range GaN/AlN quantum well intersubband photodetectors

Cited by 7 publications

References 8 publications

Thermoelastic and Optical Properties of Thick Boride Templates on Silicon for Nitride Integration Applications

Thermoelastic and Optical Properties of Thick Boride Templates on Silicon for Nitride Integration Applications

Intersubband absorption at 1.5–3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Cubic GaN∕AlN multiple quantum well photodetector

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