Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser

Chen, S.M.; Zhou, Kang; Zhang, Z.Y.; Wada, Osamu; Childs, David; Hugues, Maxime; Jin, Xiao; Hogg, R. A.

doi:10.1049/el.2012.0710

Cited by 13 publications

(8 citation statements)

References 10 publications

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“…To the best of our knowledge, this is the first demonstration of III-V InAs QD SLD on Si substrates and is a result of optimizing DFLs and careful control of dots size inhomogeneity. Further improvements in linewidth can be expected through using chirped QDs [31], QDs intermixing [32], and hybrid QW/QD structure [33,34].…”

Section: Resultsmentioning

confidence: 99%

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Chen

Tang

et al. 2015

Photonics

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Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm 2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates. OPEN ACCESSPhotonics 2015, 2 647

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Section: Resultsmentioning

confidence: 99%

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Chen

Tang

et al. 2015

Photonics

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“…A promising approach has shown that by including a QW spectrally aligned with the second excited state of the QD layers, the loss associated with the second excited state can be offset and a 100 nm bandwidth enhancement is achieved, compared to other equivalent QD−only structures, resulting in a modal gain of 300 nm [90]. A laser based on this structure has already demonstrated three−state lasing, at threshold current density 20 times lower than with QD−only lasers [91]. While these results were achieved with identical QD layers, a recent new formulation of the structure including non−identical QD layers has led to the demonstration of a 350 nm wide spontaneous emission spectra [92].…”

Section: Discussionmentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0-1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers.

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“…2 lower) shows clear luminescence peaks at 0.95 and 1.02 eV, due to the GS and ES1 transitions of the ensemble of the InAs QDs. The peak which dominates the spectrum at ~1.09 eV has been shown to be due to the lowest energy transition of the single In 0.34 Ga 0.66 As QW as opposed to higher order QD transitions [13–15]. Two more features are observed at ~1.12 and ~1.15 eV.…”

Section: Methodsmentioning

confidence: 99%

“…The QW was spectrally positioned to be resonant with the second excited state of the QD ensemble, and we previously showed that the spatial position of the QW within the multi-layer stack of the active element was critical [14]. Such structures exhibited an ~300-nm-wide modal gain spanning 1100–1400 nm [13] and exhibited simultaneous three-state lasing [15]. …”

Section: Introductionmentioning

confidence: 99%

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Chen

Zhang

et al. 2015

Nanoscale Res Lett

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A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.

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Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser

Cited by 13 publications

References 10 publications

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

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