1996 Symposium on VLSI Technology. Digest of Technical Papers
DOI: 10.1109/vlsit.1996.507793
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ROS: an extremely high density mask ROM technology based on vertical transistor cells

Abstract: IntroductionFor the replacement of conventional mass storage systems by semiconductor memory technologies very high density memories are demanded. A novel non-volatile semiconductor-memory technology called Record on Silicon (ROS) incorporating a vertical cell is aiming at this objective. Based on a cell size of about 3F2 (F denotes the minimum feature size), the technology is enabling an approximately twofold packing density compared to conventional, planar ROM and pushes into market segments for non-semicond… Show more

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Cited by 12 publications
(7 citation statements)
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“…ROMs are an integral part of most of these chips. Most of the current generation implementations make use of different circuit design techniques [1]- [8]. Some techniques also have demonstrated use of data encoding techniques for low power implementations [9].…”
Section: Transistor Count Analysismentioning
confidence: 99%
“…ROMs are an integral part of most of these chips. Most of the current generation implementations make use of different circuit design techniques [1]- [8]. Some techniques also have demonstrated use of data encoding techniques for low power implementations [9].…”
Section: Transistor Count Analysismentioning
confidence: 99%
“…It is worth the whistle that In this mask ROM design, because storing '0' is accomplished by a threshold-lowing implant using n-type impurities, as a result some pull-down paths are turned on always during precharge, i.e. the require for transistor ratio is still present, this also is why we determined (W/ L)p value by (1).…”
Section: B the Address Decodersmentioning
confidence: 99%
“…Embedded read-only-memory (ROM) is required in an important number of situations when designing ASIC [1]. The on-chip ROM is usually applied to store fixed information such as micro-code, words library etc.…”
mentioning
confidence: 99%
“…Vertical MOSFETs were first reported by Rodgers and Meindi in 1974[8]. They also report extremely high density mask ROM by using vertical transistor cells [12]. In the late 80's, groups from Toshiba and Hitachi reported vertical MOSFETs fabricated using the more accurate Reactive Ion Etch (NE) and ion implant technologies[9, 1 0, 1 1].…”
Section: Evolution Of Vertical Transistorsmentioning
confidence: 99%