RT ZnSe‐based lasers and laser arrays pumped by low‐energy electron beam

Abstract

The properties of an electron‐beam‐pumped ZnSe‐based laser array consisting of 6 one‐dimensional arrays, each comprising 10 single laser elements, have been studied. The peak output power up to 80‐100 W at room temperature in “true” green (λ = 547 nm) spectral range has been demonstrated by using for pumping electrons with the accelerating energy as low as 5.6 keV. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Electron beam pumped light emitting devices

“…More recently, researchers of the Moscow State Institute of Radio Engineering, Electronics and Automation (Russian Technological University) in collaboration with the Ioffe Institute in St. Petersburg developed a research program to demonstrate electron beam pumped green lasers using ZnSe-based separate confinement heterostructures in the transversal configuration [83][84][85][86][87][88]. Using a single CdSe quantum dot layer as emitting element (wavelength = 535 nm) embedded in a complex ZnMgSSe/ZnSSe/ZnSe waveguide, they reported a room-temperature lasing threshold as low as 0.4-0.5 A cm −2 at an acceleration voltage of 8-9 kV [85].…”

“…In this configuration, the maximum output pulsed power was 630 W (31 W per laser element) with an efficiency of 5% per facet, obtained for an acceleration voltage of 24 kV (pulse duration ≈ 0.5 µs). The concept was extended to 'true green' devices (λ = 547 nm), attaining peak pulsed output power of 80-100 W (≈3 W per laser element) at room temperature, with an acceleration voltage of only 5.6 kV (pulse duration ≈ 1 µs, repetition rate ≈ 10 Hz) [88]. The sample architecture and the threshold dependence with the acceleration voltage are illustrated in figure 14.…”

Изменение структуры и люминесцентных свойств пленок ZnSe и ZnCdSe при облучении электронным пучком

“…В связи с этим, повышенное внимание уделялось разработке альтернативных путей получения лазерной генерации, не требующих p−n-перехода и омических контактов, а именно созданию сине-зеленых полупроводниковых лазерных конвертеров А 2 В 6 /A 3 N [3,4]) и полупроводниковых лазеров А 2 В 6 с электронно-лучевой накачкой (ПЛЭН) [5]. В последних исследованиях значения рабочей энергии электронов, требуемой для их работы при комнатной температуре были снижены до 4−10 keV, была получена генерация при рекордно низких значениях пороговой плотности тока пучка электронов -около 0.5 A/cm 2 [6], а использование лазерной сборки позволило получить импульсы излучения мощностью более 600 W [7].…”