Scanning microscopic four-point conductivity probes

Review of Scientific Instruments

et al. 2017

We present a breakthrough in micro-four-point probe (M4PP) metrology to substantially improve precision of transmission line (transfer length) type measurements by application of advanced electrode position correction. In particular, we demonstrate this methodology for the M4PP current-in-plane tunneling (CIPT) technique. The CIPT method has been a crucial tool in the development of magnetic tunnel junction (MTJ) stacks suitable for magnetic random-access memories for more than a decade. On two MTJ stacks, the measurement precision of resistance-area product and tunneling magnetoresistance was improved by up to a factor of 3.5 and the measurement reproducibility by up to a factor of 17, thanks to our improved position correction technique.

Section: Introductionmentioning

confidence: 99%

Breakthrough in current-in-plane tunneling measurement precision by application of multi-variable fitting algorithm

Cagliani

Østerberg

Review of Scientific Instruments

et al. 2017

“…Resistance measurements using micro four-point probes (M4PP) [4] is a well-established technique used to monitor the sheet resistance of semiconductor surfaces [5,6,7]. Within the last decade the use of M4PP metrology has broadened from development and process monitoring for tunnelling spin valves [8] to characterization of shallow semiconductor junctions [9].…”

Section: Introductionmentioning

confidence: 99%

Precision of single-engage micro Hall effect measurements

Henrichsen

2014 International Workshop on Junction Technology (IWJT)

Kjær³

et al. 2014

Recently a novel microscale Hall effect measurement technique has been developed to extract sheet resistance (R S ), Hall sheet carrier density (N HS ) and Hall mobility (μ H ) from collinear micro 4-point probe measurements in the vicinity of an insulating boundary [1]. The technique measures in less than a minute directly the local transport properties, which enables in-line production monitoring on scribe line test pads [2]. To increase measurement speed and reliability, a method in which 4-point measurements are performed using two different electrode pitches has been developed [3]. In this study we calculate the measurement error on R S , N HS and μ H resulting from electrode position errors, probe placement, sample size and Hall signal magnitude. We show the relationship between measurement precision and electrode pitch, which is important when down-scaling the micro 4-point probe to fit smaller test pads. The study is based on Monte Carlo simulations.

“…The development of silicon-based microscale four-point probe ͑4PP͒ technique has opened a convenient possibility to study the electronic properties of samples on a small scale, 7 thin films, 8 and surface layers of semiconducting surface. 9,10 These probes can quickly be moved anywhere on the sample, enabling small regions and isolated domains to be measured.…”

Section: Introductionmentioning

confidence: 99%

“…Probes with different electrode pitch, ranging from 60 down to 1.1 m, have previously been fabricated. 7 In this work, such 4PP was used as a multifinger manipulation tool to pick and place SiNW on other micro fourpoint probe cantilevers. The fabrication process is schematically illustrated in Figs.…”

mentioning

confidence: 99%

Microcantilever equipped with nanowire template electrodes for multiprobe measurement on fragile nanostructures

Lin

Bøggild

Journal of Applied Physics

2004

We present a technique for fabricating nanoelectrode extensions to microcantilevers for multiprobe electrical characterization. For electrical measurements of fragile samples, such as thin films and nanostructures, it is advantageous to combine a small contact force with a small contact area, which can be done by reducing the dimensions of the electrodes to nanoscale dimensions. Here we report a fabrication method of a nanoscale four-point probe utilizing silicon nanowires as templates for metal electrodes. Using nanomanipulation, we attach 200-300 nm wide silicon nanowires to microfabricated cantilevers. By subsequently covering these nanowires with a metallic coating, they are made conducting and at the same time fixed to the cantilevers. These silicon nanowire four-point probes were tested on 7 and 35 nm thick Au films as well as poorly adhering 16 nm thin Au nanowires deposited on a silicon surface through a nanofabricated shadow mask. It was found that the nanowire extensions dramatically reduce the damage of the studied samples, while nearly reproducing the resistivity measurements of the unmodified, but more destructive micro four-point probes.