Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE

Tang, H.; Bardwell, J. A.; Webb, J. B.; Rolfe, S.; Moisa, S.; Fraser, J.; Raymond, S.; Sikora, P. T.

doi:10.1002/1521-396x(200112)188:2<715::aid-pssa715>3.0.co;2-f

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…A minimum Al content (6%) is required to get good 2D growth in the openings and Al contents up to 30% and AlGaN thicknesses of up to 2000 Å have been investigated with resulting GaN films showing dislocation densities in the 10 5 cm -2 range in ELO wings over masked areas. Yet another way to selectively grow GaN on SiC is to use a patterned AlN nucleation layer since Ga has a poor wetting behavior on SiC [20]. Using this technique, faceted GaN lines were grown that also exhibited some ELO; however, no defect density numbers were given.…”

Section: Epitaxial Lateral Overgrowth (Elo) and Related Techniquesmentioning

confidence: 99%

Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

Eddy

Bassim

Mastro

et al. 2006

MSF

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Silicon carbide (SiC) has become the substrate of choice for III-N epilayers applied to electronic devices due to the lack of a native III-N substrate. This is particularly true for high power applications, since the thermal conductivity of the substrate enhances device performance. Although the GaN lattice match is slightly better for SiC than for sapphire, the dislocation densities that result are still very high (generally in the high 108 cm-2 range) and often deleterious to device performance. Screw-component dislocations are especially critical since they serve as leakage paths in vertically conducting III-N devices. In this paper efforts to reduce the extended defect density in III-N films grown on SiC will be reviewed. Details on recent efforts to use step-free SiC mesa surfaces arrayed on commercial 4HSiC substrates will then be highlighted showing dramatic reductions in extended defect densities and the virtual elimination of critical defects for vertically conducting devices. In these experiments, SiC surfaces that are homoepitaxially grown step-free or of very low step density have been used as growth templates for thin (<3 μm) GaN films deposited on a novel 1000 Å AlN nucleation layer characterized by a total dislocation density two orders of magnitude lower than the previous state-of-the-art, and with no evidence of screw-component dislocations.

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Section: Epitaxial Lateral Overgrowth (Elo) and Related Techniquesmentioning

confidence: 99%

Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

Eddy

Bassim

Mastro

et al. 2006

MSF

View full text Add to dashboard Cite

show abstract

“…The selective growth of GaN three-dimensional (3D) submicrometric structures can be one of the important technological steps used for building quantum wires and dots, optical cavities, and wave guides in order to improve optical-device performance [1][2][3][4]. These quantum structures are mainly constructed by MOCVD and MBE with pyramids or prism-like shapes [2,4].…”

Section: Introductionmentioning

confidence: 99%