Selective etching of silicon in aqueous ammonia solution

Chen, Lai‐Cheng; Chen, Minjan; Tsaur, Tay-Her; Lien, Chenhsin; Wan, Chi‐Chao

doi:10.1016/0924-4247(95)01007-n

Cited by 9 publications

(6 citation statements)

References 21 publications

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“…Ohmic contact was made to the rear side of the silicon sample electrodes using a 1:1 InGa eutectic alloy. 12 The electrode area was delineated using an O-ring configuration in a polytetrafluoroethylene ͑PTFE͒ holder, the complete assembly being immersed in the electrolyte. No adhesive was used and a good electrolyte/atmosphere seal was obtained.…”

Section: Methodsmentioning

confidence: 99%

Structured Silicon Anodes for Lithium Battery Applications

Green

Fielder

Scrosati

et al. 2003

Electrochem. Solid-State Lett.

355

226

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Section: Methodsmentioning

confidence: 99%

Structured Silicon Anodes for Lithium Battery Applications

Green

Fielder

Scrosati

et al. 2003

Electrochem. Solid-State Lett.

355

226

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“…To increase surface roughness, samples were immersed in the aqueous NH 4 OH solution of 0.45 wt% at room temperature. Silicon surface is etched an-isotropically in alkaline solution 17) and surface roughness is increased without any mechanical damage. Surface roughness was controlled with varying the immersion time from 30 s to 10 min.…”

Section: Methodsmentioning

confidence: 99%

Effects of Surface Roughness and Copper Contamination on the Oxide Breakdown of Silicon Wafer

Lee¹,

Kim²,

Kim³

et al. 2002

Jpn. J. Appl. Phys.

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Surface roughness of silicon wafer was increased by the immersion in NH 4 OH solution. And copper contamination was applied to rough surface. Current-voltage characteristics were measured on 12 nm oxide. The rates of dielectric breakdown were increased consistently following the increase of roughness and copper contamination. In Fowler-Nordheim tunneling regime, abnormal current variations such as shift and hump were observed. By the tunneling current analysis, each contribution of roughness and copper contamination was related to two kinds of current variation. The shift of tunneling regime to lower electric field was induced by surface roughness via the increase of effective interface area. And the deformation in tunneling characteristics was attributed to copper contamination via the decrease of effective oxide thickness.

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“…Assuming s polarization, the reflection and transmission coefficients can be written [7][8] [1] [2] where r and t are the reflection and transmission coefficients, respectively, n 1 is the refractive index of the medium of propagation before reflection, n 2 is the refractive index of the medium that rays are refracted into, 1 is the angle of incidence, and 2 is the angle of refraction.…”

Section: Principles Of In Situ Monitoring Of Etch Rate By Reflectancementioning

confidence: 99%

“…The reflection and transmission of the light is governed by the refractive index of the media and the angle of incidence, and is described by the reflection and transmission coefficients. Assuming s polarization, the reflection and transmission coefficients can be written [7][8] [1] [2] where r and t are the reflection and transmission coefficients, respectively, n 1 is the refractive index of the medium of propagation before reflection, n 2 is the refractive index of the medium that rays are refracted into, 1 is the angle of incidence, and 2 is the angle of refraction.…”

Section: Principles Of In Situ Monitoring Of Etch Rate By Reflectance...mentioning

confidence: 99%

“…A common way to study etch rates is to evaluate the etch depths after a sample has been exposed to an etchant for a known period of time. [1][2][3][4] This procedure can however be time consuming and a large number of samples is often needed to determine accurate etch rates. A more efficient way to study etch processes may be to monitor etch rates during etching (in situ).…”

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confidence: 99%

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Laser Reflectance Interferometry for In Situ Determination of Silicon Etch Rate in Various Solution

Steinsland

Finstad

Hanneborg

1999

J. Electrochem. Soc.

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The etch rate of crystalline silicon in liquid solutions has been measured in situ by laser reflectance interferometry. A simple method has been developed which allows accurate real-time observation of the etch rate as a function of etching parameters and sample characteristics. The method is demonstrated by measurements on (100) single crystal silicon samples etched in tetramethylammonium hydroxide solutions. Etch rates in the range of 0.05-1 m/min have been measured. Some examples of the optical power reflected from silicon samples during etching are presented and the parameters which may influence the accuracy of the etch rate measurements are discussed. Interpretation of the interference pattern of the reflected power can be complicated due to sample thickness variations and surface roughness. To investigate the impact of surface topography on the detected optical power, three simulation models have been developed.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.172.-231.48 Downloaded on 2015-03-14 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.172.-231.48 Downloaded on 2015-03-14 to IP

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Selective etching of silicon in aqueous ammonia solution

Cited by 9 publications

References 21 publications

Structured Silicon Anodes for Lithium Battery Applications

Structured Silicon Anodes for Lithium Battery Applications

Effects of Surface Roughness and Copper Contamination on the Oxide Breakdown of Silicon Wafer

Laser Reflectance Interferometry for In Situ Determination of Silicon Etch Rate in Various Solution

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