Selective Excitation and Detection of Spin States in a Single Nanowire Quantum Dot

Weert, Maarten H. M. van; Akopian, N.; Perinetti, U.; Kouwen, Maarten P. van; Algra, Rienk E.; Verheijen, Marcel A.; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.; Zwiller, Val

doi:10.1021/nl900250g

Cited by 85 publications

(85 citation statements)

References 28 publications

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“…GaAs/AlGaAs 7 , GaAs/GaP 12 and InP/InAs 13 core-shell NWs. Also axial NW heterostructures 7,14 become feasible that comprise segments of different semiconductor material with nanometer thickness along the NW [15][16][17] . Another interesting type of axial heterostructures uses alternating few nm short segments of the same chemical material but different crystal structure as e.g.…”

Section: Introductionmentioning

confidence: 99%

Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

et al. 2017

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Section: Introductionmentioning

confidence: 99%

Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

et al. 2017

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“…As an example, the combination of Si sections, which are free of nuclear spins, with optically addressable electronic levels in III-V materials is promising for extending electron spin storage times. Prior to the work presented here, we have shown that a single InAsP quantum dot grown in an InP nanowire geometry is optically active, exhibits narrow emission lines, spin polarization memory effects, 10 and can be embedded in a LED device geometry. 11 Furthermore, it is predicted that NW-QDs are ideal sources of entangled photons due to the nanowire symmetry.…”

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confidence: 96%

“…By energy dispersive X-ray analysis in a transmission electron microscope, the dot size for 2 s of growth was estimated to be 9 ( 1 nm high and 33 ( 1 nm in diameter. 10 After growth, the InP nanowires were transferred from the InP growth substrate to a prepatterned p ++ silicon wafer with thermal oxide layer of 290 nm. Characterization by microphotoluminescence (µPL, see below) was done to select individual quantum dots with emission linewidths below 400 µeV.…”

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confidence: 99%

Single Electron Charging in Optically Active Nanowire Quantum Dots

Kouwen¹,

Reimer²,

Hidma³

et al. 2010

Nano Lett.

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We report optical experiments of a charge tunable, single nanowire quantum dot subject to an electric field tuned by two independent voltages. First, we control tunneling events through an applied electric field along the nanowire growth direction. Second, we modify the chemical potential in the nanowire with a back-gate. We combine these two field-effects to isolate a single electron and independently tune the tunnel coupling of the quantum dot with the contacts. Such charge control is a first requirement for opto-electrical single electron spin experiments on a nanowire quantum dot.KEYWORDS Nanowires, optically-active quantum dots, single electron charging, opto-electronics S ingle, optically active quantum dots are widely investigated due to the ability to combine both single electron charging 1,2 and single 3 or entangled 4 photonemission, which are all key requirements for quantum information processing applications. 5 Nanowire quantum dots (NW-QDs) offer additional functionalities over selfassembled quantum dots since they are embedded in a onedimensional system instead of a three-dimensional host matrix. Therefore, the single electron (hole) transport channel is naturally aligned to the optically active quantum dot in the nanowire, advantageous for combining both quantum optics 6 and transport. [7][8][9] In addition, due to the small radial dimensions of the nanowires, electrostatic gate geometries are highly versatile 7,8 and axial heterostructure design is not limited by strain. As an example, the combination of Si sections, which are free of nuclear spins, with optically addressable electronic levels in III-V materials is promising for extending electron spin storage times. Prior to the work presented here, we have shown that a single InAsP quantum dot grown in an InP nanowire geometry is optically active, exhibits narrow emission lines, spin polarization memory effects, 10 and can be embedded in a LED device geometry. 11 Furthermore, it is predicted that NW-QDs are ideal sources of entangled photons due to the nanowire symmetry. 12 Recently, an electron spin-to-charge conversion read-out scheme has been proposed, 13 which is compatible with controlled storage of carriers up to microseconds. 14 Such storage times are promising since single spins in selfassembled quantum dots (SA-QDs) have been initialized, coherently manipulated, and read-out within picosecond time scales. 15,16 The proposed spin read-out scheme 13 highly depends on the overall tunnel coupling between the SA-QD energy levels and the continuum, determined by the quantum dot-to-contact spatial separation, which is fixed during growth. 17 In this letter, we present electrical control and optical read-out of the number of electrons residing in a single InAs 0.25 P 0.75 quantum dot embedded in an InP nanowire. We first identify the neutral exciton by photocurrent spectroscopy. Second, we demonstrate that the electron number can be controlled by an electric field applied along the nanowire growth direction or by an electrostatic bac...

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“…These defect-free pure ZB wires have high optical quality as concluded from the sharp emission peak (FWHM ¼ 2.3 meV) and are a promising platform for the integration of InAsP quantum dots. 25 It allows to precisely tuning the cross-sectional shape and length to tailor and minimize the fine structure splitting. 26 …”

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confidence: 99%