Selective growth of InP/InGaAs 〈010〉 ridges: Physical and optical characterization

Poole, Philip J.; Aers, G. C.; Kam, A.; Dalacu, Dan; Studenikin, Sergei; Williams, Robin L.

doi:10.1016/j.jcrysgro.2007.12.062

Cited by 14 publications

(19 citation statements)

References 22 publications

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“…The diamagnetic coefficient for this dot corresponds to a quantum dot diameter that is considerably larger than the average diameter for a planar dot emitting at this energy and consequently produces a significantly lower g factor. The diamagnetic coefficients of the dots agree with the estimated top diameter of the mesa which is calculated as in the base dimensions, amount of InP delivered, and the sticking coefficient 21 .…”

Section: G Factor Tuning Using Indium Phosphide Pyramidal Nanotempsupporting

confidence: 73%

Tuning the excitongfactor in single InAs/InP quantum dots

et al. 2009

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Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp 3 tight binding calculations, which show that the hole g factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.

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Section: G Factor Tuning Using Indium Phosphide Pyramidal Nanotempsupporting

confidence: 73%

Tuning the excitongfactor in single InAs/InP quantum dots

et al. 2009

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“…The directed self-assembly of quantum dots can be viewed as the control of the nucleation process by virtue of the facet-dependant adatom surface migration using a nanotemplate [27,45,46]. The nanotemplate allows one to attain dimensions necessary to restrict nucleation down to a single dot starting from dimensions readily obtained using electron beam (ebeam) lithography.…”

Section: Directed Self-assemblymentioning

confidence: 99%

“…In this article, we review the directed self-assembly of InAs quantum dots using InP nanotemplates [27,45,46] as a route to deterministic quantum dot devices targeting telecommunication wavelengths. The nanotemplating process, based on selective-area epitaxy, is described and sitecontrolled nucleation is demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

Dalacu¹,

Reimer

Frédérick

et al. 2010

Laser & Photonics Reviews

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Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is key to understanding their chemical properties, methods that probe these energy levels in situ are important. We show how electrostatic force detection using atomic force microscopy reveals the electronic structure of individual and coupled self-assembled quantum dots. An electron addition spectrum in the Coulomb blockade regime, resulting from a change in cantilever resonance frequency and dissipation during tunneling events, shows one by one electron charging of a dot. The spectra show clear level degeneracies in isolated quantum dots, supported by the first observation of predicted temperature-dependent shifts of Coulomb blockade peaks. Further, by scanning the surface we observe that several quantum dots may reside on what topologically appears to be just one. These images of grouped weakly and strongly coupled dots allow us to estimate their relative coupling strengths.

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“…This results in a vertical growth rate for the (001) surface that is higher than observed for planar growth, and has to be taken into account if a specific pyramid height is required. This can be determined using geometric arguments similar to those used for the growth of ridges [18]. This continues until the pyramid completes to a point, figure 3(b), the (001) surface having been 'removed', or filled in.…”

Section: Nanopyramid Growth Evolutionmentioning

confidence: 99%

Selective epitaxy of semiconductor nanopyramids for nanophotonics

et al. 2010

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We present a detailed study of the parameters which affect the geometrical perfection of nanopyramids used for the site-selected nucleation of quantum dots. Through an understanding of crystal facet formation, we demonstrate that undesirable high index planes can be suppressed using carefully optimized lithography together with properly orientated source fluxes in the growth reactor. High quality InP nanopyramids are reported with individual InAs/InP quantum dots positioned with high precision. This represents an important milestone for the fabrication of complex quantum dot based nanophotonic devices.

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Selective growth of InP/InGaAs 〈010〉 ridges: Physical and optical characterization

Cited by 14 publications

References 22 publications

Tuning the excitongfactor in single InAs/InP quantum dots

Tuning the excitongfactor in single InAs/InP quantum dots

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

Selective epitaxy of semiconductor nanopyramids for nanophotonics

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