Abstract:A bipolar one-diode–one-resistor (1D1R) device with a Pt/HfO2/Ti/n-Si(001) structure was demonstrated. The 1D1R resistive random access memory (RRAM) device consists of a Ti/n-Si(001) diode and a Pt/HfO2/Ti resistive switching cell. By using the Ti layer as the shared electrode for both the diode and the resistive switching cell, the 1D1R device exhibits the property of stable self-compliance and the characteristic of robust resistive switching with high uniformity. The high/low resistance ratio reaches 103. T… Show more
“…With the increase in temperature, the mobility of oxygen vacancy will also increase, so the reset voltage will decrease. This is consistent with the experimental results obtained by Chao Lu et al [25], which further proves that the established electro-thermal coupling model is accurate. The thermal energy of oxygen vacancies and ions increases, and such a strong electric field is not required to establish or destroy conductive filaments [26].…”
Section: The Influence Of Parameters On the Resistance Characteristicssupporting
The resistive memory has become one of the most promising new memory types because of its excellent performance, and HfO2 resistive material has attracted extensive attention. The conduction mechanism based on oxygen vacancy is widely recognized in the research of new nonvolatile memory. An RRAM electrothermal coupling model based on the oxygen vacancy conduction mechanism was constructed using COMSOL. The resistance process of the device is simulated by solving the coefficient partial differential equation, and the distribution of oxygen vacancy concentration, temperature, electric field, electric potential and other parameters in the dielectric layer at different voltages are obtained. The effects of temperature, dielectric layer thickness, top electrode thermal conductivity and conductive wire size on the resistance characteristics of the device are studied. It has guiding significance to further study the RRAM mechanism.
“…With the increase in temperature, the mobility of oxygen vacancy will also increase, so the reset voltage will decrease. This is consistent with the experimental results obtained by Chao Lu et al [25], which further proves that the established electro-thermal coupling model is accurate. The thermal energy of oxygen vacancies and ions increases, and such a strong electric field is not required to establish or destroy conductive filaments [26].…”
Section: The Influence Of Parameters On the Resistance Characteristicssupporting
The resistive memory has become one of the most promising new memory types because of its excellent performance, and HfO2 resistive material has attracted extensive attention. The conduction mechanism based on oxygen vacancy is widely recognized in the research of new nonvolatile memory. An RRAM electrothermal coupling model based on the oxygen vacancy conduction mechanism was constructed using COMSOL. The resistance process of the device is simulated by solving the coefficient partial differential equation, and the distribution of oxygen vacancy concentration, temperature, electric field, electric potential and other parameters in the dielectric layer at different voltages are obtained. The effects of temperature, dielectric layer thickness, top electrode thermal conductivity and conductive wire size on the resistance characteristics of the device are studied. It has guiding significance to further study the RRAM mechanism.
“…The high-resistance curve of the non-doped device is composed of two regions: the Ohmic conduction (I∝V) at the low-voltage region, and the linear fit of the lnI-V 1/2 at high-voltage region (the inset of Fig. 4), confirming the Schottky emission mechanism [15, 33]. Fig.…”
Section: Resultsmentioning
confidence: 71%
“…HfO 2 has been used as high-k gate dielectrics in CMOS devices since its high reliability, fast operation speed, and low-power consumption [11, 12]. It is also preferred by researchers as a memristive material [13–15].…”
Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO
2
, have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO
2
-based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 10
3
, > 10
4
s, and > 10, respectively.
“…Considering that Pt has high work function (5.65 eV), which is much higher than the electron affinity of HfO 2−x , the Schottky barrier is inevitably formed at the Pt/HfO 2−x interface. The inset shows linear fits of to confirm the Schottky emission at state 2 30 , 46 – 48 . The previous I / V hysteresis loops show obvious asymmetry in the inset of Fig.…”
The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO2−x, given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO2−x material have not been studied. Here we report Pt/HfO2−x/Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO2−x films. As O/Hf ratios of HfO2−x films increase, the forming voltages, SET voltages, and Roff/Ron windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 103 pulses (10 ns) and retention test at 85 °C (>104 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO2−x-based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.
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