Self-organized quantum dot formation by ion sputtering

Facsko, Stefan; Dekorsy, Thomas; Trappe, C.; Kurz, H.

doi:10.1016/s0167-9317(00)00307-5

Cited by 77 publications

(91 citation statements)

References 11 publications

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“…[3] Here, we present a summary of AFM based quantitative investigations of the temporal pattern evolution of semiconductor surfaces under normal incidence ion erosion. The promising results for Ar + bombarded GaSb(001) surfaces are compared with noble gas ion erosion of the Si(001) surface as well as with ion bombardment of a nanofaceted SiGe film on Si(001).…”

Section: Ion Bombardment Induced Pattern Formation On Semiconductor Smentioning

confidence: 99%

“…2(h)) the term "dot" most -show in principe quantum dot properties. [3] However, due to the sputter damage resulting in an about 2 nm thick amorphous layer, [15] the efficiency of devices fabricated by such a strategy will be probably too low. For the crystalline para-sexiphenyl films, however, potential for devices like organic thin film transistors [39] and organic light emitting diodes [40,41] has already been demonstrated.…”

Section: Outlook To Potential Applicationsmentioning

confidence: 99%

“…Thus, the exploration of self-organization phenomena at crystalline surfaces and in epitaxial films became an attractive research topic in the last decade. [1] Among the most active fields in this research area are strain driven self-organization in the intensively investigated inorganic semiconductor heteroepitaxy, [2] pattern formation due to low-energy ion erosion of semiconductor surfaces, [3] and the emerging field of nanostructure selforganization in crystalline organic semiconductor films. [4] Here, we apply atomic-force microscopy (AFM) under ambient conditions to quantify the self-organization in several semiconductor systems.…”

Section: Introductionmentioning

confidence: 99%

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Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

2006

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Semiconductor nanostructures – and in particular ensembles of them – are the prerequisites for the ongoing miniaturization in microelectronics. Since lithographic techniques become increasingly expensive and technologically complex, self‐organization into quasiperiodic nanostructure arrays is an elegant alternative. Here, strain‐induced pattern formation in SiGe/Si(001), ion bombardment induced self‐organization of inorganic semiconductors, and crystallite ordering in oligophenylene films are presented as illustrative examples for nanostructure self‐organization that is not at all restricted to semiconductor systems.

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Section: Ion Bombardment Induced Pattern Formation On Semiconductor Smentioning

confidence: 99%

Section: Outlook To Potential Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

2006

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“…A second class of self-assembly approaches involves the formation of semiconductor or metal nanoclusters and 2-D or 3-D assemblies of these clusters. [4][5][6] It has been shown that the resistive linking between adjacent metal clusters in a 2-D network can be controlled by the choice of intercluster linking molecule 4 and that specific dimer/trimer structures can be realized. 7 In addition, room-temperature Coulomb blockade has been realized in self-assembled metal/molecular nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Janes

Lee

Liu

et al. 2000

Journal of Elec Materi

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We report a fabrication approach in which we combine self-assembled metal/ molecule nanostructures with chemically stable semiconductor surface layers. The resulting structures have well controlled dimensions and geometries (~ 4 nm Au nanoclusters) provided by the chemical self-assembly and have stable, low-resistance interfaces realized by the chemically stable semiconductor cap layer (low-temperature grown GaAs passivated by the organic tether molecules). Scanning tunneling microscope imaging and current-voltage spectroscopy of nanocontacts to n-GaAs fabricated using this approach indicate high quality, ohmic nanocontacts having a specific contact resistance of ~1 ¥ 10 -7 W · cm 2 and a maximum current density of ~1 ¥ 10 7 A/cm 2 , both comparable to those observed in large area contacts. Uniform 2-D arrays of these nanocontact structures have been fabricated and characterized as potential cells for nanoelectronic device applications.

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“…It allows to produce ordered surface features (e.g., ripples or dots) down to a few nm in size [3,4]. Indeed, IBS-induced surface patterns can be used in several applications, particularly as templates for further nanofabrication [5].…”

mentioning

confidence: 99%

Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering

Moreno-Barrado¹,

Gago²,

Redondo-Cubero³

et al. 2015

EPL

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Self-organized quantum dot formation by ion sputtering

Cited by 77 publications

References 11 publications

Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering

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