Semi-active high-efficient CMOS rectifier for wireless power transmission

Kim, Stephen T.; Song, Taejoong; Choi, Jae Hyun; Bien, Franklin; Lim, Kyutae; Laskar, J.

doi:10.1109/rfic.2010.5477403

Cited by 16 publications

(5 citation statements)

References 7 publications

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“…On the other hand, a switch is unable to control the direction of current flow and reverse leakage currents will flow whenever the transistor is on and the load potential is higher than the source potential. The problem of reverse leakage currents is studied in [5]. To explain the problem, voltage and current waveforms of the cross coupled rectifier of fig.…”

Section: Inductive Link Rectifiersmentioning

confidence: 99%

A passive CMOS rectifier with leakage current control for medical implants

Ghanad

Dehollain

2012

2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)

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A passive rectifier for reducing reverse leakage currents and ripples of rectified output voltage is proposed. The Power Conversion Efficiency (PCE) of the rectifier is also improved by controlling the turn on time of the NMOS transistors. The rectifier is implemented with standard 0.18 um CMOS technology. The measured rectifier achieves 66 % PCE while delivering 3 mW to 1.8 Volt load at 13.56 MHz.

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Section: Inductive Link Rectifiersmentioning

confidence: 99%

A passive CMOS rectifier with leakage current control for medical implants

Ghanad

Dehollain

2012

2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)

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“…In Fig. 3(c), the active PMOS diodes mitigate reverse leakage currents by quickly turning OFF while the cross-coupled NMOS transistors entail a voltage drop of V DS only [7]. The rectifier shown in Fig.…”

Section: Rectifier Topologiesmentioning

confidence: 99%

Design of efficient CMOS rectifiers for integrated piezo-MEMS energy-harvesting power management systems

Nielsen-Lonn

Harikumar

Wikner

et al. 2015

2015 European Conference on Circuit Theory and Design (ECCTD)

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Abstract-MEMS-based piezoelectric energy harvesters are promising energy sources for future self-powered medical implant devices, low-power wireless sensors, and a wide range of other emerging ultra-low-power applications. However, the small form factors and the low vibration frequencies can lead to very low (in µW range) harvester output power. This makes the design of integrated CMOS rectifiers a challenge, ultimately limiting the overall power efficiency of the entire power management system. This work investigates two different fully integrated rectifier topologies, i.e. voltage doublers and full bridges. Implemented in 0.35-µm, 0.18-µm, and 65-nm CMOS technologies, the two rectifier architectures are designed using active diodes and crosscoupled pairs. These are then evaluated and compared in terms of their power efficiency and voltage efficiency for typical piezoelectric transducers in such ultra-low-power applications which generate voltages between 0.27-1.2 V. Furthermore, analytical expressions for the rectifiers are verified against circuit simulation results, allowing a better understanding of their limitations.

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“…The schematic of the dynamic body biasing [11] utilized in both the main rectifier and the comparator is depicted in Fig. 3(b).…”

Section: Proposed Cmos Rectifiermentioning

confidence: 99%

A CMOS Rectifier With a Cross-Coupled Latched Comparator for Wireless Power Transfer in Biomedical Applications

Cha

Park

2012

IEEE Trans. Circuits Syst. II

123

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A highly efficient rectifier for wireless power transfer in biomedical implant applications is implemented using 0.18-μm CMOS technology. The proposed rectifier with active nMOS and pMOS diodes employs a four-input common-gate-type capacitively cross-coupled latched comparator to control the reverse leakage current in order to maximize the power conversion efficiency (PCE) of the rectifier. The designed rectifier achieves a maximum measured PCE of 81.9% at 13.56 MHz under conditions of a low 1.5-V pp RF input signal with a 1-kΩ output load resistance and occupies 0.009 mm 2 of core die area.

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Semi-active high-efficient CMOS rectifier for wireless power transmission

Cited by 16 publications

References 7 publications

A passive CMOS rectifier with leakage current control for medical implants

A passive CMOS rectifier with leakage current control for medical implants

Design of efficient CMOS rectifiers for integrated piezo-MEMS energy-harvesting power management systems

A CMOS Rectifier With a Cross-Coupled Latched Comparator for Wireless Power Transfer in Biomedical Applications

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