Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

Koketsu, Hidenori; Hatayama, Tomoaki; Yano, Hiroshi; Fuyuki, Takashi

doi:10.7567/jjap.51.051201

Cited by 13 publications

(13 citation statements)

References 19 publications

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“…23 The formation of "V" shaped bottoms prevents etching of trenches with equidistant sidewalls, resulting in trench opening as a function of etch depth. The importance of minimal microtrench formation can be summarized through the efforts made to eliminate them in SiC etching via Bosch-like etching, 38 thermal chlorine treatment, 27 hydrogen bromide chemistry, 39 and the adjustment of electrode gap 26 as well as other process parameters. [19][20][21] In this work, no post-etch treatment was used to eliminate microtrench.…”

Section: Resultsmentioning

confidence: 99%

“…18 Deep etching with mask openings > 40 μm [19][20][21][22] identified the role of key etch parameters and likely served as stepping stones for the more recent work focusing on smaller mask openings. [23][24][25][26][27] As seen with Si, 28 SiC deep etching is affected by width of mask opening. 29 Due to mass transfer limitations, decreasing Ni mask openings from 100 μm to 4 μm, reduces SiC etch rate by 44%.…”

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Dry Etching of High Aspect Ratio 4H-SiC Microstructures

Luna

Tadjer

Anderson

et al. 2017

ECS J. Solid State Sci. Technol.

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Deep reactive-ion etching (DRIE) of high aspect ratio structures in 4H-SiC is demonstrated. Electroplated nickel is used as the etch mask and patterned with openings ranging from 2–10 μm. Etch depths of 51 to 57 μm are obtained after a 2 hour reactive ion etch with SF6/O2 inductively coupled plasma for 2–6 μm mask openings. Thus, aspect ratios (depth: mask opening) of 25.5 to 9.5 are achieved. Sidewall morphology is shown as a function of helium back side cooling with close to vertical sidewalls obtained with less cooling.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Dry Etching of High Aspect Ratio 4H-SiC Microstructures

Luna

Tadjer

Anderson

et al. 2017

ECS J. Solid State Sci. Technol.

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“…The channel length was 0.6 μm along the trench sidewall. Subsequently, the V-groove trench structures appeared by the thermochemical etching process at the elevated temperature around 900°C in Cl 2 ambient after the SiO 2 etching mask fabrication [18]. After this process, the (0-33-8) faces are exposed as facets, which is extremely stable crystal face.…”

Section: A Device Fabricationmentioning

confidence: 99%

Novel Designed SiC Devices for High Power and High Efficiency Systems

Mikamura

Hiratsuka

Tsuno

et al. 2015

IEEE Trans. Electron Devices

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Two types of 4H-silicon carbide (SiC) MOSFETs are proposed in this paper. One is the novel designed V-groove trench MOSFET that utilizes the 4H-SiC (0-33-8) face for the channel region. The MOS interface using this face shows the extremely low interface state density (D it ) of 3 × 10 11 cm −2 eV −1 , which causes the high channel mobility of 80 cm 2 V −1 s −1 results in very low channel resistance. The buried p + regions located close to the trench bottom can effectively alleviate the electric field crowding without the significant sacrifice of the increase of the resistance. The low specific ON-state resistance of 3.5 m cm 2 with sufficiently high blocking voltage of 1700 V is obtained. The other is the double implanted MOSFET with the carefully designed junction termination extension and field-limiting rings for the edge termination region, and the additional doping into the junction FET region. With a high-quality and high-uniformity epitaxial layer, 6 mm × 6 mm devices are fabricated. The well balanced specific ON-state resistance of 14.2 m cm 2 and the blocking voltage of 3850 V are obtained for 3300 V application. Index Terms-(0-33-8) face, 4H-silicon carbide (SiC), buried p + region, channel mobility, field-limiting ring (FLR), junction FET (JFET), junction termination extension (JTE), MOSFET, V-groove trench.Yasuki Mikamura received the B.E. and M.E. degrees in electrical engineering from Kyoto University, Kyoto, Japan, in 1983 and 1985, respectively.

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“…10) Furthermore, the 4H-SiC (0338) face has another feature in that the surface is automatically exposed by thermo-chemical Cl 2 gas etching. [11][12][13][14][15][16] It means that the surface is chemically the most stable crystal face. According to the theoretical approaches by Refs.…”

Section: Introductionmentioning

confidence: 99%

Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO₂/SiC (0$\bar{3}$3$\bar{8}$) interfaces

Masuda

Hatakeyama

Harada

et al. 2019

Jpn. J. Appl. Phys.

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Low interface state density (Dit) and high field-effect mobility (μfe) at SiO2/4H-SiC (0 3 ) Metal-oxide-semiconductor (MOS) interfaces are known. In order to understand the behavior and the scattering mechanisms induced electrons in more detail, we fabricated the Hall-bar lateral MOSFETs on the 4H-SiC (0 3 ) substrate with various channel doping concentrations and evaluated the trapped electron densities and the Hall mobilities by split capacitance–voltage and Hall-effect measurements. Our results demonstrated that more than 80% of the induced electrons at the SiO2/4H-SiC MOS (0 3 ) interfaces contribute to the current conduction as the free electrons. The majority of the electron traps seemed to be located mainly at the edge of the conduction band because the trapped electron density increased around the threshold voltage and was saturated in the high gate voltage region.

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Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

Cited by 13 publications

References 19 publications

Dry Etching of High Aspect Ratio 4H-SiC Microstructures

Dry Etching of High Aspect Ratio 4H-SiC Microstructures

Novel Designed SiC Devices for High Power and High Efficiency Systems

Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO₂/SiC (0$\bar{3}$3$\bar{8}$) interfaces

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Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching

Cited by 13 publications

References 19 publications

Dry Etching of High Aspect Ratio 4H-SiC Microstructures

Dry Etching of High Aspect Ratio 4H-SiC Microstructures

Novel Designed SiC Devices for High Power and High Efficiency Systems

Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0$\bar{3}$3$\bar{8}$) interfaces

Contact Info

Product

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Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO₂/SiC (0$\bar{3}$3$\bar{8}$) interfaces