Si-based light emitters synthesized with Ge+ ion bombardment

Zinovyev, V. A.; Zinovieva, A. F.; Смагина, Ж. В.; Двуреченский, А. В.; Vdovin, V. I.; Гутаковский, А. К.; Fedina, L. I.; Borodavchenko, O. M.; Zhivulko, V. D.; Mudryi, A. V.

doi:10.1063/5.0063592

Cited by 8 publications

(3 citation statements)

References 42 publications

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“…However, for the application at hand scalable manufacturing and integration with semiconductor and superconductor electronics are crucial considerations, and III-V light emitters have a long history of difficulty integrating with silicon. The quantum dot model is also applicable to group IV, Ge-based quantum dots [85], which may prove adequate for the present appli-…”

Section: E Rate Equations For the Transmitter Light Sourcementioning

confidence: 99%

Superconducting optoelectronic loop neurons

Shainline

Buckley

McCaughan

et al. 2019

Journal of Applied Physics

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Circuits using superconducting single-photon detectors and Josephson junctions to perform signal reception, synaptic weighting, and integration are investigated. The circuits convert photondetection events into flux quanta, the number of which is determined by the synaptic weight. The current from many synaptic connections is inductively coupled to a superconducting loop that implements the neuronal threshold operation. Designs are presented for synapses and neurons that perform integration as well as detect coincidence events for temporal coding. Both excitatory and inhibitory connections are demonstrated. It is shown that a neuron with a single integration loop can receive input from 1000 such synaptic connections, and neurons of similar design could employ many loops for dendritic processing.

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Section: E Rate Equations For the Transmitter Light Sourcementioning

confidence: 99%

Superconducting optoelectronic loop neurons

Shainline

Buckley

McCaughan

et al. 2019

Journal of Applied Physics

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“…The additional ion implantation raised the concentration of oxide precipitates and altered the defect structure of samples subjected to low-temperature annealing, while the use of a chlorinecontaining atmosphere helped modify the defect structure and allowed for gettering of nonradiative recombination centers. The results reported in [15,16] are worth noting. In these studies, the addition of preliminary implantation of Ge + ions helped increase considerably the luminescence intensity in silicon structures with GeSi quantum dots, which were formed in the process of epitaxial growth.…”

Section: Introductionmentioning

confidence: 88%

Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates

et al. 2022

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Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+ ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than <150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3·10-20 cm2·s at room temperature. Keywords:: Light-emitting diodes, dislocation-related luminescence, silicon, oxygen precipitates.

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“…Дополнительная имплантация ионов увеличивала концентрацию окисных преципитатов и изменяла дефектную структуру образцов, прошедших низкотемпературные отжиги, а использование хлорсодержащей атмосферы модифицировало дефектную структуру и позволяло геттерировать центры безызлучательной рекомбинации. Интересно отметить результаты работ [15,16], в которых добавление предварительной имплантации ионов Ge + позволило существенно увеличить интенсивность люминесценции в структурах кремния с GeSi квантовыми точками, которые формировались в процессе эпитаксиального роста. Цель настоящей работы заключалась в разработке технологии, основанной на комбинации методов ионной имплантации и формировании кислородных преципитатов, для создания и исследования свойств СД с ДЛ.…”

Section: Introductionunclassified

Кремниевые Светодиоды С Дислокационной Люминесценцией, Сформированные С Участием Кислородных Преципитатов

Соболев¹,

Калядин²,

Штельмах³

et al. 2022

Физика И Техника Полупроводников

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Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+- ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than 150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3 · 10-20 cm2 · s at room temperature.

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Si-based light emitters synthesized with Ge+ ion bombardment

Cited by 8 publications

References 42 publications

Superconducting optoelectronic loop neurons

Superconducting optoelectronic loop neurons

Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates

Кремниевые Светодиоды С Дислокационной Люминесценцией, Сформированные С Участием Кислородных Преципитатов

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