Si-containing block copolymers for self-assembled nanolithography

Abstract

Articles you may be interested inBlock copolymer self assembly for design and vapor-phase synthesis of nanostructured antireflective surfaces J. Vac. Sci. Technol. B 32, 06FE02 (2014); 10.1116/1.4896335Directed self-assembly of ternary blends of block copolymer and homopolymers on chemical patterns J. Vac. Sci. Technol. B 31, 06F301 (2013); 10.1116/1.4818882 Curing process of silsesquioxane in self-organized diblock copolymer template Block copolymers can self-assemble to generate patterns with nanoscale periodicity, which may be useful in lithographic applications. Block copolymers in which one block is organic and the other contains Si are appealing for self-assembled lithography because of the high etch contrast between the blocks, the high etch resistance of the Si-containing block, and the high Flory-Huggins interaction parameter, which is expected to minimize line edge roughness. The locations and long range order of the microdomains can be controlled using shallow topographical features. Pattern generation from poly͑styrene͒-poly͑ferrocenyldimethylsilane͒ and poly͑styrene͒-poly͑dimethyl-siloxane͒ block copolymers, and the subsequent pattern transfer into metal, oxide, and polymer films, is described.

Block Copolymer Nanostructures for Technology

“…Simulation studies [60] suggest that increasing the Flory-Huggins parameter χ is the most direct way to reduce LER, since the interface width between the blocks is proportional to χ −1/2 [61]. Highly dissimilar blocks such as PS and PDMS (χ = 0.26) should improve considerably the edge sharpness of the domains [62], although there is a dearth of confirming reports. The LER also depends on the degree of polymerization N of each block, with larger N leading to smoother lines [63].…”

Block Co-Polymers for Nanolithography: Rapid Microwave Annealing for Pattern Formation on Substrates

“…Directed self-assembly of PS-b-PDMS on topographic patterns has been demonstrated in a number of articles [3,4,19,21,[32][33][34][35][36][37][38]. Further, Buriak et al has shown the effectiveness of microwave assisted method to guide cylinder-forming PS-b-PMMA and PS-b-P4VP BCPs on topographically patterned substrates [39].…”

Cost-Effective Sub-20 nm Lithography: Smart Chemicals to the Rescue

“…BCPs with lower χ factors tend to be easier to anneal since the movement of the polymer blocks encounters lower activation barriers. High χ factor BCPs, such as silicon-based copolymers, 34 are more difficult to anneal by a thermal bake only and typically require the use of solvent vapors to achieve pattern formation. 35 Even for p(S-b-MMA), early studies on the physics of block copolymer self-assembly frequently used annealing times of tens of hours to days; however, annealing times can be brought down to trackcompatible times of two minutes or less.…”