Si diffusion in GaAs and Si-induced interdiffusion in GaAs/AlAs superlattices

Chen, B.; Zhang, Q.-M.; Bernholc, J.

doi:10.1103/physrevb.49.2985

Cited by 26 publications

(13 citation statements)

References 31 publications

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“…Our numerical calculations showed that the existence of inhomogeneous doping can strongly modify the electronic properties of doped quantum wells, being at least as important as nonabrupt interface effects. Despite limitations on the knowledge of Si diffusion in GaAs and Al x Ga 1−x As [16], and the limited spatial resolution (∼30 nm) achieved nowadays by the experimental methods used to probe dopant profiles [4][5][6][7], we believe that future experiments on inhomogeneous doping characterization and on the electron intersubband transitions in inhomogeneous doped single nonabrupt GaAs/Al x Ga 1−x As quantum wells will validate the assumptions of our inhomogeneous doping model and confirm our main results.…”

Section: Resultssupporting

confidence: 67%

Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1−xAs quantum wells

Wang

Farias

Freire

1999

Superlattices and Microstructures

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Section: Resultssupporting

confidence: 67%

Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1−xAs quantum wells

Wang

Farias

Freire

1999

Superlattices and Microstructures

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“…Our value for D SG 3Ϫ is, however, consistent with the activation energy of 2.6 eV obtained for the ͑Si Ga -V Ga ) 2Ϫ complex by Chen, Zhang, and Bernholc. 27 They studied also ͑Si Ga -V Ga ) Ϫ and ͑Si Ga -V Ga ) 0 complexes, but the ͑Si Ga -V Ga ) 2Ϫ complex has the lowest formation and migration energies. We also made some calculations using singly charged gallium vacancies, instead of triply charged ones.…”

Section: 3 Ev For the Activation Energy Of D Sgmentioning

confidence: 99%

Concentration dependent and independent Si diffusion in ion-implanted GaAs

et al. 1997

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The diffusion of silicon has been studied in ͗100͘ GaAs implanted with 1ϫ10 16 40-keV 30 Si ϩ ions/cm 2 .The Si concentration profiles were measured by secondary-ion mass spectrometry and nuclear resonance broadening techniques and the defect distributions by the Rutherford backscattering spectrometry channeling technique. The implanted samples were subjected to annealing in argon atmosphere in the temperature range 650°C-850°C. Two independent silicon diffusion mechanisms were observed. Concentration independent diffusion, observed as a broadening of the initial implanted distribution, is very slow and is assigned to Si atoms diffusing interstitially. Concentration dependent diffusion with low solubility and extending deep into the sample is quantitatively explained by diffusion via vacancies of Si atoms in the Ga and As sublattices. Diffusion coefficients together with carrier concentration as a function of Si concentration are given at different temperatures. The solid solubility of Si in GaAs has been determined and an exponential temperature dependence observed. An estimate of the amount of Si atoms residing on either Ga or As sites and the amount of Si Ga ϩ -Si As Ϫ pairs is given. Finally, a fast method is presented for solving the diffusion equation numerically.

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“…This mechanism would be consistent with the observation of electrically inactive Si that is highly mobile at high concentrations. 76,82 Large increases in V III point defects can also explain why some other dopants likely exhibit limited diffusion. Sn and Te are n-type but may prefer diffusion on the group V sublattice.…”

Section: Concentration Dependent Si Diffusion In Ingaas Andmentioning

confidence: 99%

“…74 Amphoteric site occupation and electrical compensation at high Si doping concentrations also does a poor job of explaining Si diffusion behavior at high concentrations in InGaAs and GaAs. DFT calculations [75][76][77][78][79] and quantum well intermixing studies [80][81][82] suggest that Si diffuses primarily on the group III sublattice. Si shows heavily concentration dependent diffusion but there is limited theoretical prediction that Si As donors or inactive Si Ga -Si As next-nearest neighbor neutral pair configurations are mobile in GaAs 76,82 despite experimental evidence indicating that heavily compensated Si is highly mobile and inactive in InGaAs.…”

Section: Ecs Journal Of Solid State Science and Technology 5 (5) Q12mentioning

confidence: 99%

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

Lind

Aldridge

Hatem

et al. 2016

ECS J. Solid State Sci. Technol.

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An overview of various processing and dopant considerations for the creation of heavily-doped n-InGaAs is presented. A large body of experimental evidence and theoretical prediction point to dopant vacancy-complexing as the limiting mechanism for electrical activation in heavily Si doped InGaAs and GaAs. Dopant incorporation techniques which require thermal treatment steps to move dopants onto lattice sites like ion implantation and monolayer doping exhibit stable activation up to a limit of ≈1.5 × 1019 cm−3. Growth-based dopant incorporation methods have shown much higher (5 × 1019 cm−3) active concentrations but these activate concentrations are shown in multiple studies to be metastable. Other device specific process-flow constraints with respect to modern CMOS devices which may make some means of dopant incorporation method, or species selection more appropriate for a given application are also discussed.

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Si diffusion in GaAs and Si-induced interdiffusion in GaAs/AlAs superlattices

Cited by 26 publications

References 31 publications

Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1−xAs quantum wells

Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1−xAs quantum wells

Concentration dependent and independent Si diffusion in ion-implanted GaAs

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

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Si diffusion in GaAs and Si-induced interdiffusion in GaAs/AlAs superlattices

Cited by 26 publications

References 31 publications

Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1−xAs quantum wells

Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1−xAs quantum wells

Concentration dependent and independent Si diffusion in ion-implanted GaAs

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As

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Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As