SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Burk, Albert A.; O’Loughlin, Michael J.; Sumakeris, Joseph J.; Hallin, Christer; Berkman, Elif; Balakrishna, V.; Young, Jonathan; Garrett, Lara; Irvine, K. G.; Powell, Adrian R.; Khlebnikov, Yuri I.; Leonard, Robert L.; Basceri, C.; Hull, Brett; Agarwal, Anant

doi:10.4028/www.scientific.net/msf.600-603.77

Cited by 8 publications

(6 citation statements)

References 13 publications

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“…Mean doping is 9.77E15 cm -3 with an average uniformity of 12.8% σ/mean and 12% σ/mean wafer-to-wafer variation. ever increasing device sizes, current morphological defect densities in the 10x100-mm configuration, including all the contributions from the substrates and epitaxial growth process, are now only ~0.8 defect/cm 2 , half of what we reported for the 8x100-mm reactor [3]. As shown in Figure 8, these defect densities are consistent with up to 90% yields of large 5x5 mm power devices.…”

Section: Run-to-run Epitaxial Layer Reproducibility (On 100 MM Wafers)supporting

confidence: 72%

“…Initial results were presented for SiC-epitaxial growths employing a novel 6x150-mm, Warm-Wall Planetary Vapor Phase Epitaxial Reactor. The demonstrated combination of 150-mm diameter wafers, growth rates of 20 micron/hr and short <2 hr fixed-cycle times allow a >2x increase in epitaxial areal throughput in comparison to our previous reports [3]. No significant change in wafer shape was observed upon epitaxial growth consistent with good-quality, low-stress substrates and good intrawafer temperature uniformity.…”

Section: Discussionmentioning

confidence: 48%

“…Initial results are presented for a novel 6x150/10x100-mm Warm Wall Planetary SiC VPE Reactor. The Warm-Wall reactor configuration was first applied to SiC in a 7x2-inch configuration [2] and has been steadily scaled to larger capacity configurations culminating most recently in the 8x100 mm [3] and 10x100-mm [4] configurations. These increases have resulted in a 30x increase in SiC epitaxial layer throughput of up to 20 micron thick layers suitable for 1-2kV SiC power devices.…”

Section: Introductionmentioning

confidence: 99%

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SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

Burk

Tsvetkov

Barnhardt

et al. 2012

MSF

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Initial results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased areal throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Growth rates of 20 micron/hr and short <2 hr fixed-cycle times (including rapid heat-up and cool-down ramps), while maintaining desirable epitaxial layer quality were achieved. No significant change in 150 mm diameter wafer shape is observed upon epitaxial growth consistent with good-quality, low-stress substrates and low (<5°C) cross-wafer epitaxial reactor temperature variation. Specular epitaxial layer morphology was obtained, with morphological defect densities consistent with projected 5x5 mm die yields as high as 80% and surface roughness, Ra, of 0.3 nm. Intrawafer thickness uniformity is good, averaging only 1.6% and within a run wafer-to-wafer thickness variation is 2.7%. N-type background doping densities less that 1E14 cm-3 have been measured by CV. Doping uniformity and wafer-to-wafer variation currently average ~12% requiring further improvement. The first 100 m thick 150-mm diameter epitaxial growths are reported.

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Section: Run-to-run Epitaxial Layer Reproducibility (On 100 MM Wafers)supporting

confidence: 72%

Section: Discussionmentioning

confidence: 48%

Section: Introductionmentioning

confidence: 99%

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SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

Burk

Tsvetkov

Barnhardt

et al. 2012

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“…Considering the high ~1600°C temperatures required for good SiC crystal quality, and relatively low cracking temperatures of silane 600-700°C, this configuration is well suited for SiC epitaxial production. The Warm-Wall reactor configuration was first applied to SiC in a 7x2inch configuration [2] and has been steadily scaled to larger capacity configurations resulting in 8x100 mm [3] and 10x100-mm [4] configurations. Further increases to 6x150-mm capacity [5] have doubled the areal throughput yet again.…”

Section: Introductionmentioning

confidence: 99%

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor

Burk

Tsvetkov

O’Loughlin

et al. 2014

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Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Increased growth rates of 30-40 micron/hr and short <2 hr fixed-cycle times (including rapid heat-up and cool-down ramps), while maintaining desirable epitaxial layer quality were achieved. Increased quantities of 150-mm epitaxial wafers now allow statistical analysis of their epitaxial layer properties. Specular epitaxial layer morphology was obtained, with morphological defect densities <0.4 cm-2, consistent with projected 5x5 mm die yields averaging 93% for Si-face epitaxial layers between 10 and 30 microns thick. Intrawafer thickness and doping uniformity are good, averaging 1.7% and 5.1% respectively. Wafer-to-wafer doping variation has also been significantly reduced from ~12 [5] to <3% s/mean. Initial results for C-face growths show excellent morphology (97%) but poor doping uniformity (~16%). Wafer shape is relatively unchanged by epitaxial growth consistent with good epitaxial temperature uniformity.

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“…Therefore, multiple-wafer growth within a run is under vigorous development in order to improve yield output to meet the industry increasing demands. [10] To date, several groups have grown SiC films in multiwafer mode either in commercial or home-made hot wall planetary LPCVD systems. [11−13] One of the most concerned issues is the uniformities of the intrawafer and the wafer-to-wafer doping and growth rate in the multi-wafer system.…”

Section: Introductionmentioning

confidence: 99%