SiC Integrated MOSFETs

Onda, Shoichi; Kumar, Rajesh; Hara, Kunihiko

doi:10.1002/1521-396x(199707)162:1<369::aid-pssa369>3.0.co;2-4

Cited by 81 publications

(58 citation statements)

References 18 publications

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“…However, oxide thickness by thermal oxidation is almost the same in crystal planes parallel to the c axis, even if they have a small tilt angle less than ϳ20°. 11 Another possible origin is the different tilt angle of the trench sidewalls from the crystallographically accurate crystal planes. The MOS channel planes denoted in this letter are not crystallographically accurate crystal planes, because UMOSFETs were fabricated on 8°off substrates.…”

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confidence: 66%

Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates

Yano

Nakao

Mikami

et al. 2007

Applied Physics Letters

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Articles you may be interested inInfluence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012); 10.1063/1.4759354 Publisher's Note: "Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors" [Appl. Phys. Lett. 99, 072117 (2011)] Appl. Phys. Lett. 99, 259901 (2011); 10.1063/1.3665121 High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 109, 023702 (2011); 10.1063/1.3533767 Inversion layer carrier concentration and mobility in 4H-SiC metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 108, 054509 (2010); 10.1063/1.3484043Enhanced channel mobility of 4H-SiC metal-oxide-semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

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confidence: 66%

Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates

Yano

Nakao

Mikami

et al. 2007

Applied Physics Letters

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“…1 As most dopants diffuse prohibitively slowly into SiC, ion implantation is the preferred doping method in device fabrication. However, the implantation process inevitably creates radiation-induced defects.…”

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confidence: 99%

Structure of the silicon vacancy in6H−SiCafter annealing identified as the carbon vacancy–carbon antisite pair

et al. 2001

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We investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide ͑SiC͒ with electron paramagnetic resonance ͑EPR͒, the magnetic circular dichroism of the absorption ͑MCDA͒, and MCDA-detected EPR ͑MCDA-EPR͒. In samples annealed beyond the annealing temperature of the isolated silicon vacancy we observed photoinduced EPR spectra of spin Sϭ1 centers that occur in orientations expected for nearest neighbor pair defects. EPR spectra of the defect on the three inequivalent lattice sites were resolved and attributed to optical transitions between photon energies of 999 and 1075 meV by MCDA-EPR. The resolved hyperfine structure indicates the presence of one single carbon nucleus and several silicon ligand nuclei. These experimental findings are interpreted with help of total energy and spin density data obtained from the standard local-spin density approximation of the density-functional theory, using relaxed defect geometries obtained from the self-consistent charge density-functional theory based tight binding scheme. We have checked several defect models of which only the photoexcited spin triplet state of the carbon antisite-carbon vacancy pair (C Si -V C ) in the doubly positive charge state can explain all experimental findings. We propose that the (C Si -V C ) defect is formed from the isolated silicon vacancy as an annealing product by the movement of a carbon neighbor into the vacancy.

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“…This idea has developed to the power MOSFET [9], [10] utilizing the accumulation layer instead of the inversion layer.…”

Section: Introductionmentioning

confidence: 99%

Counter-doped MOSFETs of 4H-SiC

Ueno

Oikawa

1999

IEEE Electron Device Lett.

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In this paper, we investigate the effect of counterdoping of nitrogen at the channel region of epitaxial n-channel 4H-SiC MOSFET's on the channel mobility and the threshold voltage. From this study, we have found that the channel mobility steeply improves as the nitrogen dose increases. At a dose of 2 2 or 2.5 2 10 12 cm 02 the enhancement MOSFET has achieved an effective channel mobility of 20 cm 2 /Vs or a field effect mobility of 38 cm 2 /Vs at a peak.

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SiC Integrated MOSFETs

Cited by 81 publications

References 18 publications

Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates

Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates

Structure of the silicon vacancy in6H−SiCafter annealing identified as the carbon vacancy–carbon antisite pair

Counter-doped MOSFETs of 4H-SiC

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