SiC liquid-phase epitaxy on patterned substrates

3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

“…Typical values of this ∥/⊥ anisotropy calculated in this work are very small, below 3 in the 1400–1450 °C range and close to 0 at lower temperature (see Table ). If we now compare these values with the ones that can be found in the literature for the epitaxial growth of SiC, one can see that it is similar with the case of SiC growth from the melt using pure Si where values close to 1 are found . But when CVD technique is used, the typical values of ∥/⊥ anisotropy are in the 10 2 –10 3 range at 1600 °C .…”

“…If we now compare these values with the ones that can be found in the literature for the epitaxial growth of SiC, one can see that it is similar with the case of SiC growth from the melt using pure Si where values close to 1 are found. 6 But when CVD technique is used, the typical values of ) / ^anisotropy are in the 10 2 À10 3 range at 1600 °C. 2 This is because of the very high lateral growth rates (>400 μm/h).…”

“…One can then evaluate the lateral growth rates, the growth rate anisotropy or the evolution of crystalline defects. For the specific case of silicon carbide, this was already done using chemical vapor deposition (CVD), − sublimation, and liquid phase epitaxy (LPE) techniques. In the latter case, only Si melt was used, which means temperatures higher than 1400 °C and thus homoepitaxial growth was obtained.…”

Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals

“…On the other hand, the free-spreading growth may start from multiple nucleation. With time, the crystallites would come in contact and merge together along the <112 ¯0> directions of the highest growth rate 27 to form defective boundaries inside the n and l facets.…”

Growth of single crystal silicon carbide by liquid phase epitaxy using samarium/cobalt as unique solvent

“…Si, Si:Cr or Si:Sc as solvent for the solute C. 15,16 Si:Sc was preferably used by Yakimova et al 17 However, this alloy seems to be problematic as it forms various solid solutions. The most promising solvents/solvent components for lowtemperature LPE include Ga, Sn, Ni, Cu, Al, Cr and Co. [18][19][20][21] The purpose of the metal component is to increase the solubility of the carbon, thereby facilitating faster growth rates, thicker SiC layers and lower growth temperatures. However, the metal is incorporated into the SiC layer to some extent, thereby forming unwanted metal carbides/metal silicides.…”