Sidewall depletion in nano-patterned LAO/STO heterostructures

Minhas, Mohsin; Blaschek, H. H.; Heyroth, Frank; Schmidt, G.

doi:10.1063/1.4943401

Cited by 10 publications

(16 citation statements)

References 24 publications

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“…Up to now temperature dependent transport in this material system has mainly been investigated in large area structures. In these experiments the resistance typically drops monotonically upon cooling, except for a small Kondo like increase at low temperatures which is observed in some samples 10 – 13 . During warm-up the resistance follows the same temperature dependence as during cooling down.…”

Section: Introductionmentioning

confidence: 63%

“…In all these cases, a monotonic drop in resistance with decreasing temperature was observed. Only recently an etching process was demonstrated by which the electron gas can be patterned into stable nanostructures while maintaining the interface conductivity and keeping the substrate insulating 13 . With these structures temperature dependent resistance measurements have been carried out which yield a surprising result.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependent giant resistance anomaly in LaAlO3/SrTiO3 nanostructures

Minhas

Müller

Heyroth

et al. 2017

Sci Rep

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The resistance of the electron gas (2DEG) at the interface between the two band insulators LaAlO3 (LAO) and SrTiO3 (STO) typically drops monotonically with temperature and R/T curves during cooling and warm-up look identical for large area structures. Here we show that if the LAO/STO is laterally restricted by nanopatterning the resistance exhibits a temperature anomaly. Warming up nanostructures from low temperatures leads to one or two pronounced resistance peaks between 50 and 100 K not observed for larger dimensions. During cool-down current filaments emerge at the domain walls that form during a structural phase transition of the STO substrate. During warm-up the reverse phase transition can interrupt filaments before the sheet conductivity which dominates at higher temperature is reestablished. Due to the limited number of filaments in a nanostructure this process can result in a complete loss of conductance. As a consequence of these findings the transport physics extracted from experiments in small and large area LAO/STO structures may need to be reconsidered.

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Section: Introductionmentioning

confidence: 63%

Section: Introductionmentioning

confidence: 99%

Temperature dependent giant resistance anomaly in LaAlO3/SrTiO3 nanostructures

Minhas

Müller

Heyroth

et al. 2017

Sci Rep

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“…The nonconducting areas are created either by our removing the c-LAO by reactive-ion etching (RIE) [ Fig. 1(a)], as demonstrated by Minhas et al [10], or by our locally preventing the growth of more than three unit cells of c-LAO [11]. The latter can be achieved by use of a patterned amorphous LAO (a-LAO) layer with The second process is almost identical to the method described by Schneider et al [11] and is also related to methods [5,6,12] where patterned amorphous materials different from LAO were used to prevent c-LAO growth.…”

Section: Device Descriptionmentioning

confidence: 99%

“…After development, the LAO is patterned by dry etching down to the STO substrate by the etching process described in Ref. [10]. The a-LAO layer is patterned by a standard PMMA lift-off process.…”

Section: Appendix A: Sample Preparationmentioning

confidence: 99%

Nanoscale Tunnel Field-Effect Transistor Based on a Complex-Oxide Lateral Heterostructure

et al. 2019

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“…A conventionally used physical etching method, Ar ion irradiation, induces oxygen vacancies at the SrTiO 3 surface (161) and makes it conducting, frustrating the goal of the patterning to define locally conducting regions. We note that, recently, low-energy Ar irradiation processes have been successfully used to pattern LaAlO 3 -SrTiO 3 interfaces (162)(163)(164). Nonetheless, doing so still requires covering the sides of the conducting channel with an additional layer to prevent shorts between gate and channel.…”

Section: Introductionmentioning

confidence: 99%

Manifold field effects at a complex oxide interface

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Another driving force for the formation of distinctive electronic phases are interactions between electrons, or electronic correlations. Because the kinetic energy of d-orbital electrons is typically relatively small, they are particularly susceptible to the effects of these interactions (12). Prominent examples of correlated-electron effects are superconductivity, the Mott insulator state, and different types of magnetism. Field-effect control of such correlations may lead to the discovery of new physics, as well as to realizing new components for electronics (13). This applies in particular to the interfaces between complex oxides, where the mesoscopic physics of semiconductor interfaces can be combined with the electronic correlations found in oxides (14).

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Sidewall depletion in nano-patterned LAO/STO heterostructures

Cited by 10 publications

References 24 publications

Temperature dependent giant resistance anomaly in LaAlO3/SrTiO3 nanostructures

Temperature dependent giant resistance anomaly in LaAlO3/SrTiO3 nanostructures

Nanoscale Tunnel Field-Effect Transistor Based on a Complex-Oxide Lateral Heterostructure

Manifold field effects at a complex oxide interface

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