Resonant dielectric nanostructures represent a promising platform for light manipulation at the nanoscale. In this paper, we describe an active photonic system based on Ge(Si) quantum dots coupled to silicon nanodisks. We show that Mie resonances govern the enhancement of the photoluminescent signal from embedded quantum dots due to a good spatial overlap of the emitter position with the electric field of Mie modes. We identify the coupling mechanism, which allows for engineering the resonant Mie modes through the interaction of several nanodisks. In particular, the mode hybridization in a nanodisk trimer results in an up to 10-fold enhancement of the luminescent signal due to the excitation of resonant antisymmetric magnetic and electric dipole modes.

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Al(2)O(3) and TiO(2) thin films have been deposited on Si wafers, quartz, BK7 glass, and polycarbonate substrates by atomic layer deposition (ALD). The refractive indices and growth rates of the materials have been determined by spectroscopic ellipsometry and transmission electron microscopy. The influence of substrate temperature and precursor on the refractive indices has been investigated. The refractive index of TiO(2) significantly increases with temperature, whereas the Al(2)O(3) films are temperature insensitive. The films deposited using H(2)O(2) as oxygen source show a slightly higher refractive index than the films prepared with H(2)O. Multilayer narrow-bandpass filters and broadband antireflective coatings have been designed and produced by ALD.