SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems

Washio, Katsuyoshi

doi:10.1109/ted.2003.810484

Cited by 71 publications

(28 citation statements)

References 12 publications

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“…The selective epitaxial growth of the base in a cavity defined by the emitter window provides the emitter-base self-alignment. Although the selective epitaxial base growth process is more complicated than a non-selective process, it has proven to be manufacturable and is widely used in industry [6][7][8][9]. Due to the self-alignment, the link base region, between the intrinsic (monocrystalline) base and the extrinsic (p+ doped polycrystalline) base, contributes less to the total base resistance.…”

Section: A Single Poly Quasi Self-aligned Architecturementioning

confidence: 99%

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Decoutere

Huylenbroeck

Heinemann

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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The European project DOTFIVE [1] addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe BiCMOS towards 500 GHz F max and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be described, and measures taken in the project to overcome these limitations will be summarized. Initial results indicate that the objectives of the project can be reached.

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Section: A Single Poly Quasi Self-aligned Architecturementioning

confidence: 99%

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Decoutere

Huylenbroeck

Heinemann

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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“…The working principle of HBTs and the review work are given in detail in [1][2][3][4][5]. Several works have been reported on BiCMOS technology on bulk substrate that can be found from the literature [6][7][8]. Although BiCMOS technology on bulk substrate offers devices with promising performance, the process complexity, isolation among devices and power consumption have been the main issues in deep submicron lithography nodes.…”

Section: Introductionmentioning

confidence: 99%

Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

Misra

Qureshi²

2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved f t BV CEO product (397 GHzV). As the BV CEO value is higher for low value of epi layer doping, higher supply voltage can be used to increase the f t value of the HBT. At 1.8 V V CE , the f t BV CEO product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV f t BV CEO product at 1.2 V V CE ). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

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“…SiGe HBT technology has come of age as an important semiconductor technology for both wired and wireless telecommunication applications, because of its superior analog and RF performance, and its CMOS integration capability [1]. Low-frequency 1/f noise is one of the advantages that SiGe HBTs have over GaAs HBTs and CMOS devices, making it an excellent choice for low-noise amplifiers and oscillators [2,3].…”

Section: Introductionmentioning

confidence: 99%

Characterization and modeling of SiGe HBT low-frequency noise in inverse operating condition

Tang

Babcock

Krakowski

et al. 2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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We present in this work the first characterization and modeling of low-frequency noise for SiGeNPNs and SiGe-PNPs operating in the inverse mode from an advanced SiGe RF technology on SOI. Comparison is made between low-frequency noise in the forward and inverse modes. Impact of selective implanted collector (SIC) on inverse mode low-frequency noise is investigated. Finally, a methodology for low-frequency noise compact modeling in the inverse mode of operation is discussed.

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SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems

Cited by 71 publications

References 12 publications

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

Characterization and modeling of SiGe HBT low-frequency noise in inverse operating condition

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