2014
DOI: 10.1149/06406.0285ecst
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SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance

Abstract: Development of SiGe HBTs in BiCMOS technology with both high f T and f MAX faces significant challenges. To increase f T, thinning the base and collector thickness is generally the first step to reduce the carrier transit times, but this increases the base resistance and the collector-base capacitance, which impacts f MAX negatively. Increasing collector doping is also often employed to increase f T, but this increases co… Show more

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Cited by 11 publications
(2 citation statements)
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“…The current state-of-the-art performance level for the DPSA design is represented, for example, by STMicroelectronics' 55 nm SiGe BiCMOS technology featuring peak f T /f max /gate-delay values of 320 GHz/370 GHz/ 2.34 ps [1]. By the help of non-standard technology elements the feasibility of f max values around 500 GHz could be shown [6]- [9]. The recently proposed SEG HBT process in which an epitaxial base link (EBL) is formed after emitter fabrication [7] offers a potential way to overcome limitations of the classical DPSA technology in forming a more conductive baselink suitable for ongoing lateral scaling.…”
Section: Introductionmentioning
confidence: 99%
“…The current state-of-the-art performance level for the DPSA design is represented, for example, by STMicroelectronics' 55 nm SiGe BiCMOS technology featuring peak f T /f max /gate-delay values of 320 GHz/370 GHz/ 2.34 ps [1]. By the help of non-standard technology elements the feasibility of f max values around 500 GHz could be shown [6]- [9]. The recently proposed SEG HBT process in which an epitaxial base link (EBL) is formed after emitter fabrication [7] offers a potential way to overcome limitations of the classical DPSA technology in forming a more conductive baselink suitable for ongoing lateral scaling.…”
Section: Introductionmentioning
confidence: 99%
“…HBT architectures in volume production today are limited to an fmax of up to 400GHz (1),( 2),(3),(4), (5), (6). Alternative HBT architectures to overcome this limitation have been proposed (7), (8), (9), (10).…”
Section: Introductionmentioning
confidence: 99%