2007
DOI: 10.1002/mmce.20239
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Signal-noise support vector model of a microwave transistor

Abstract: In this work, a support vector machines (SVM) model for the small-signal and noise behaviors of a microwave transistor is presented and compared with its artificial neural network (ANN) model. Convex optimization and generalization properties of SVM are applied to the black-box modeling of a microwave transistor. It has been shown that SVM has a high potential of accurate and efficient device modeling. This is verified by giving a worked example as compared with ANN which is another commonly used modeling tech… Show more

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Cited by 38 publications
(41 citation statements)
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“…To evaluate the quality of the fit to target data and to make comparison between the SVRM and neural models, the following error terms are found to be convenient as in [4]:…”
Section: Error Analysis For the Black-box Modelsmentioning
confidence: 99%
See 1 more Smart Citation
“…To evaluate the quality of the fit to target data and to make comparison between the SVRM and neural models, the following error terms are found to be convenient as in [4]:…”
Section: Error Analysis For the Black-box Modelsmentioning
confidence: 99%
“…Furthermore, SVM is based on small sample statistical learning theory, whose optimum solution is based on limited samples instead of infinite sample that ensures enormous computational advantages. Typical applications of the SVRM to the microwave modeling can be found in [4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…1 which consists of the two main parts: (i) The first part is "The Data-Based Soft" model of the device which needs some amount of data to be established. In this part, linear learning machines such as neural network [5], or support vector machine [6] can be employed; (ii) The second part is 'the Circuit Analyze-Based' model whose fundamentals are given in the previous subsection. So PDSs can be obtained from the interrelations among the physically realizable performance triplets and terminations over a defined operation bandwidth B, expressed as follows:…”
Section: Performance Data Sheetsmentioning
confidence: 99%
“…1: (i) Firstly, a Soft-Model of the transistor which may be either Neural [5] or Support Vector model [6], is generated to determine the signal and noise behaviors within the whole operation domain of the device consisting of the configuration type (CT), the bias condition V DS , I DS , the operation frequency f ; (ii) Secondly, noise, input VSWR, gain performance of the device is characterized point by point within the operation domain as given in the works [7,8]; (iii) Finally, the Performance Data Sheets (PDS) can be obtained as resulted from the Gain-Bandwidth limitations [9] using the performance characterization of the active device.…”
Section: Introductionmentioning
confidence: 99%
“…This device characterization problem is solved point by point in [4,5] on the rigorous mathematical bases throughout the operation domain within the physical limitations of the employed device. Then, combining this performance characterization with the Artificial Neural Networks (ANN) or Support Vector Regression Machine (SVRM) model of the device [6,7], the compatible [F, V i , G T ] triplets together with their source Z S and load Z L terminations can be obtained as the functions of the operation variables V DS , I DS , f of the device (Fig. 1).…”
Section: Introductionmentioning
confidence: 99%