Signal Transmission and Reflection Losses of Cylindrical and Tapered shaped TSV in 3D Integrated Circuits

Sahu, Chopali Chanchal; Chandrakar, Shivangi; Majumder, Manoj Kumar

doi:10.1109/ises50453.2020.00021

Cited by 5 publications

(1 citation statement)

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“…The relation between impedance of the network (Z1, Z2) and the S parameter is provided in [30]. Thus, the Sparameters of the circuit can be calculated by using the Z1 and Z2 expressions.…”

Section: Power Loss Analysismentioning

confidence: 99%

Performance analysis of Cu/CNT-based TSV: impact on crosstalk and power

2022

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This paper presents the first realistic and holistic approach to exhibit compact resistance-inductance-capacitanceconductance (RLCG) model for (Carbon nanotube) CNT and Cu based different shaped through-silicon vias (TSVs) in 3-D ICs. The model primarily comprises the effect of bump, inter-metal dielectric, and eddy currents. Using the proposed model, a mathematical formulation for the coaxial, cylindrical, and tapered based via parasitics are derived using the concept of partial inductance, sectioning via laterally into infinitesimally thin slices and triangular inter-tube assemblage, respectively. The analytical model is validated against a fabrication based experimental results and subsequently employed for crosstalk induced delay, peak noise, and power losses analysis. Additionally, for the further validation, the S parameter for the Pi-based model is derived, and compared with an electromagnetic simulator to benchmark the proposed model. The tremendous consistency between the analytical and EM simulation based results further evidences the validity of the proposed model. Encouragingly, a significant improvement in the power losses, crosstalk, and peak noise can be observed using the CNT-based tapered TSV compared to the Cu-based via structures. Additionally, it is shown that the irrespective of via height, the average crosstalk induced delay, peak noise, signal transmission, and reflection loss of the TSV with tapered shaped 15-shell CNT bundle is reduced by 22.82%, 27.80%, 47.63%, and 33.71%, respectively compared to the Cu. KeywordsCrosstalk-induced delay • Eddy effect • Single-Walled Carbon nanotube (CNT) • 3-D IC • Mean-time-to-failure (MTTF) • resistance-inductance-capacitance-conductance (RLCG) model • Through-silicon via (TSV).

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“…The relation between impedance of the network (Z1, Z2) and the S parameter is provided in [30]. Thus, the Sparameters of the circuit can be calculated by using the Z1 and Z2 expressions.…”

Section: Power Loss Analysismentioning

confidence: 99%