Silicon Nitride Films by Direct RF Sputter Deposition

Kominiak, G. J.

doi:10.1149/1.2134441

Cited by 21 publications

(4 citation statements)

References 21 publications

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“…They are characterized by activation energies which lie within the forbidden bandgap of the semiconductor, and by their thermal capture and emission rates for minority and majority carriers, respectively. Their contribution toward diode leakage is governed by the Shockley-Read-HaI1 generation-recombination theory (1). The most effective centers, in terms of the generation component, lie near the midgap of the semiconductor.…”

Section: Precipitation-induced Currents and Generation-recombination ...mentioning

confidence: 99%

Silicon Nitride Coatings on Molybdenum by RF Reactive Ion Plating

Fukutomi

Kitajima

Okada

et al. 1977

J. Electrochem. Soc.

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Rf reactive ion plating technique has been applied to the preparation of protective silicon nitride coating on molybdenum. All the deposits prepared at deposition temperature of less than 1O00~ were amorphous. Silicon in deposits was found to be present as nitride by Auger electron spectroscopic, infrared absorption spectroscopic, and x-ray diffraction analyses. Nearly stoichiometric silicon nitride deposits were obtained at a deposition rate of as high as 1 ~m/min. Several factors affecting the stoichiometry of the silicon nitride were discussed. Oxidation test of the coated specimens showed that the silicon nitride layer obtained under optimum conditions protected the molybdenum substrate from oxidation in Ar-l% O2 gas mixtures up to approximately 1200~ Typical pitting corrosion was observed in the coating film at the higher temperatures.

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Section: Precipitation-induced Currents and Generation-recombination ...mentioning

confidence: 99%

Silicon Nitride Coatings on Molybdenum by RF Reactive Ion Plating

Fukutomi

Kitajima

Okada

et al. 1977

J. Electrochem. Soc.

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“…Silicon nitride may be deficient in nitrogen and silicon dioxide deficient in oxygen. The addition of nitrogen during nitride sputtering or oxygen during oxide sputtering improves the stoichiometry of the fIlm [242,243]. Another method is to sputter, e.g., silicon with oxygen or nitrogen, or titanium with oxygen, rather than with argon, to form silicon dioxide, silicon nitride, or titanium oxide.…”

Section: Reactive Sputter Depositionmentioning

confidence: 99%

Thin Film Deposition

El-Kareh

1995

Fundamentals of Semiconductor Processing Technology

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Section: Department Of Electrical Engineering Carnegie-mellon Univermentioning

confidence: 99%

“…Studies of gold doping in Si, for example, have shown atomic gold to pile up in n + regions (9,10). A second approach (11,12) has been to study the unintentional loss of desired lifetimecontrolling impurity species during subsequent device processing steps or by aging processes at operating temperatures or higher (13,14). Using neutron activation analysis, platinum has been studied here for its resistance to unintentional gettering by processing cycles accompanying its introduction into the silicon lattice.…”

Section: A Comparison Of the Process-inducedmentioning

confidence: 99%

The Effect of Substrate Bias on the Properties of Reactively Sputtered Silicon Nitride

Stephens

Vossen

Kern

1976

J. Electrochem. Soc.

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FLATBAND VOLTAGES OF MOS CAPACITORS 303hr and fields up to 6 • 106 V/cm. For a 15 min bias stress of 106 V/cm. no flatband voltage shifts could be detected except for the sample corresponding to 105 cma/min of TCE/He, in which a positive shift of 0.55V was observed. It would be consistent with the initial flatband measurements if this shift were due to the motion of mobile charge acquired in the sample oxidized with the high TCE/He flow rate. The ions H + or H30 + which are mobile at room temperature (7) are possible candidates. The actual role and fate of the hYdrogen contained in the TCE has not been established.Van der Meulen et aI. (4) have indicated that some sodium may be mobile at room temperature. For extremely high fields (6 • 106 V/cm) and negative gate bias, the samples oxidized with 105 craB/rain of TCE/He exhibited a transient flatband instability similar to that observed by Van der Meulen et al. (4) for C12-grown oxides, although the instability was less pronounced. The flatband voltage first shifted in the positive direction and then for long times (on the order of 10 hr) shifted slightly in the negative direction, the flatband voltage never changing sign, however. A positive bias stress of 106 V/cm inhibited this negative bias instability completely. At field strengths normally encountered in device operation, the oxides were more stable.Next the effects of positive bias stress were investigated. The resulting shift in flatband voltage is shown in Fig sites for electrons in the oxide will not account for this behavior. A flatband shift of 0.062V corresponds to a mobile charge density of about 5 • 109 charges/cm a.For higher flow rates of TCE/He the flatband shift increases. At a concentration of 105 cm~/min of TCE/ He, not shown in Fig. 2, the shift was about 2.5V (corresponding to a mobile charge concentration of 2.85 • 10n/cm2), and substantial hysteresis appears in the C-V characteristics. Figure 2 shows the recovery of this shift with time and the observed hysteresis.(No hysteresis was observed for samples oxidized with low concentrations of TCE.) The dramatic increase in VFB and AVFB implies high concentrations of mobile oxide charges or donor-like oxide traps, either of which could also cause the observed hysteresis.In summary we have shown that TCE can be effectively used to lower oxide charge mobile at room temperature (mostly H + or HsO + and perhaps some alkali ions) to values as small as 5 • 109/cm ~. Because of ease of handling, TCE may be a good substitute for HC1 in growing high quality oxides. For extremely high fields (larger than those normally encountered in device operation) the TCE-grown oxides exhibited a room-temperature instability similar to that observed in C12-grown oxides. For high quality oxides there is an optimum flow rate of TCE during oxidation of about 4-5%. Above this point, the introduction of additional positive mobile charge or donor-like traps in the oxide degrade the C-V characteristics. The incidence of low frequency behavior for large TCE flow rates indic...

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Silicon Nitride Films by Direct RF Sputter Deposition

Cited by 21 publications

References 21 publications

Silicon Nitride Coatings on Molybdenum by RF Reactive Ion Plating

Silicon Nitride Coatings on Molybdenum by RF Reactive Ion Plating

Thin Film Deposition

The Effect of Substrate Bias on the Properties of Reactively Sputtered Silicon Nitride

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