Simple analytical expressions for the fringing field and fringing-field-induced transfer time in charge-coupled devices

Bakker, J.

doi:10.1109/16.78393

Cited by 10 publications

(5 citation statements)

References 8 publications

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“…This result has been also reported in [4] where a 2-D analytical solution predicts a very sharp decline of the horizontal potential gradient as a function of depth. Therefore for a monochromatic source the number of photons interacting between two flat surfaces, the Si -Si02 interface and the bottom of the depletion region, can be expressed simply as:…”

Section: A Variable Voltage Methodssupporting

confidence: 82%

The depletion depth of high resistivity X-ray CCDs

Prigozhin¹,

Gendreau

Bautz³

et al. 1998

IEEE Trans. Nucl. Sci.

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We have developed several techniques which allow measurement of the depletion depth of X-ray CCDs used for imaging and spectroscopy in the 0.2 -10 keV energy band. These methods were developed as part of the calibration program for the AXAF CCD Imaging Spectrometer (ACIS). The depletion depth is a parameter that determines the high-energy detection limit of the CCDs. One technique is based on the analysis of long traces of high energy ionizing particles traveling through the CCD nearly parallel to its surface. Measuring the ratio of the narrow portion of the trace to the broader diffused portion allows one to extract the depletion depth. Two other methods require illumination of the device with a monochromatic X-ray source (radioactive Fe55, for instance). Analysis of the spectral distribution of the singleand multipixel events yields the depletion depth. By suitable choice of CCD operating voltages we were able to reach a depletion depth of 75 microns with the ACIS devices. We also present a simple analytical technique to calculate the depth of the depletion region in this essentially three dimensional structure.

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Section: A Variable Voltage Methodssupporting

confidence: 82%

The depletion depth of high resistivity X-ray CCDs

Prigozhin¹,

Gendreau

Bautz³

et al. 1998

IEEE Trans. Nucl. Sci.

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“…The most widely used such abstraction is the threshold voltage Vi . We therefore proceed by choosing a nominal threshold voltage of the form (9.13) The actual threshold voltage will be lower than the nominal one by the amount of drain-induced barrier lowering (DIEL) (24)(25)(26)(27). In this study, I use the expression given by Fjeldly and Shur (28]:…”

Section: Threshold Scalingmentioning

confidence: 99%

Scaling of MOS technology to submicrometer feature sizes

Mead

1994

Analog Integr Circ Sig Process

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Industries based on MOS technology now play a prominent role in t he developed and the developing world. j\fore importantly, MOS techn ology drives a large proportion of innovation in many technologies . It is likely th at the course of technological development depends more on the capability of MOS technology than on any other technical factor . T herefore, it is worthwhile investigating the na.ture and limits of future improvements to MOS fabrication. The key to improved MOS technology is r eduction in feature size. Reduction in feature size, and the attendant changes in device behaviour, will shape the nature of effective uses of the technology at t he system level. This paper reviews recent, and historical, data on feature scaling and device behavior, and attempts to predict the limits to this scaling. We conclude wi th som e remarks on the system-level implications of fea.ture size as the minimum size approach es physical limits. IntroductionIt is always difficult . to nredict the future; few attemp ts to do so have met with resounding su ccess. One remarkable example of successful prediction is the exponential increase in complexity of integrated circuits, first noted by Gordon E . !vioor e. As we contemplate the ongoing evolution of this great technology, many questions arise: Can the trend continue? Will single-chip systems attain levels of complexity that render present system archit ectures unworkable [lj? vVill digital t.echniques completely replace analog methods [2]"7 The answers to these questions depend critically on the properties of the individual transistor s that provide the essential active functions, without which no interesting system beh avior is possible. Integrated-circuit density is increased by a reduction in the size of elementary feat.ures of the underlying structures; therefore, any discussion of the capabilities of future technologies must rely on an understanding of how the properties of transistors evolve as the transistor s' dimensions are made smaller.Elsewhere [3], we described the factors that limit how small an MOS transistor *Reproduced from Journal of VLSI Signal P rocessing, 8 , 9-25 (1994) Kluwer Academic Publishers, Boston. ~fanufacture d in The Netherlands.

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“…Analytical approximations for the fringing fields in CCD's have been developed and can be calculated by following Bakker. 15 Our present devices have gates which are 3-4 times wider than the depth of the channels, and thus the fringing fields are weak. For narrower gates the fringing fields are increased and negligible trapping is expected, even at much lower temperatures.…”

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confidence: 81%

Signal and charge transfer efficiency of few electrons clocked on microscopic superfluid helium channels

Sabouret

Bradbury

Shankar

et al. 2008

Applied Physics Letters

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Electrons floating on the surface of liquid helium are possible spin-qubits for quantum information processing. Varying electric potentials are not expected to modify spin states, which allows their transport on helium using a charge-coupled device (CCD)-like array of underlying gates. This approach depends upon efficient inter-gate transfer of individual electrons. Measurements are presented here of the charge transfer efficiency (CTE) of few electrons clocked back and forth above a short microscopic CCD-like structure. A charge transfer efficiency of 0.99999992 is obtained for a clocking frequency of 800 kHz. 73.25.+i, 73.90.+f, 67.90.+z, 03.67.Lx

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Simple analytical expressions for the fringing field and fringing-field-induced transfer time in charge-coupled devices

Cited by 10 publications

References 8 publications

The depletion depth of high resistivity X-ray CCDs

The depletion depth of high resistivity X-ray CCDs

Scaling of MOS technology to submicrometer feature sizes

Signal and charge transfer efficiency of few electrons clocked on microscopic superfluid helium channels

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