2012
DOI: 10.1016/j.solmat.2012.06.008
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Simple power-loss analysis method for high-efficiency Interdigitated Back Contact (IBC) silicon solar cells

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Cited by 39 publications
(15 citation statements)
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“…Equation (2) for the normalized series-resistance base component is taken from [55] and reformulated according to our specific device architecture. For substrate, we assume an n-type wafer of thickness t, resistivity ρ w , and with a donor-dopant density equal to N D .…”
Section: Appendixmentioning
confidence: 99%
“…Equation (2) for the normalized series-resistance base component is taken from [55] and reformulated according to our specific device architecture. For substrate, we assume an n-type wafer of thickness t, resistivity ρ w , and with a donor-dopant density equal to N D .…”
Section: Appendixmentioning
confidence: 99%
“…Then, the resist is removed and the remaining SiO x /SiN x mask is etched in buffered HF. The design for the fingers pitch is taken from [24], and no gap between emitter and BSF a-Si:H fingers is present.…”
Section: Device Processmentioning
confidence: 99%
“…Figure 5(a) shows the variation of recombination in emitter (left) and BSF (right) with respect to the contact ratio. The contacts on emitter and BSF accounts for around 6% [16,17] of recombination losses in solar cells. These recombination losses reduce short circuit current and cell efficiency.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…The emitter of IBC solar cells is chosen not only wider than BSF to increase short circuit current [14] but also it is optimized with respect to BSF to reduce the effect of electrical shading or EQE losses [15]. The contact opening of emitter and BSF is another important parameter in the designing of IBC solar cells because it is responsible for power [16] and series resistance loss [17]. According to Meier and Schroder [18], the selection of contact size depends on the current transfer length.…”
Section: Introductionmentioning
confidence: 99%