SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing

InAs Diodes Fabricated Using Be Ion Implantation

“…Using an implant energy of 80 keV and a dose up to 4 ×10 13 cm −2 , creating a peak Be concentration of 1.1 × 10 18 cm −3 , minimal lattice strain is introduced to the crystal and only point defects are formed after the implant. The Be profile before and after annealing of Be implanted InAs has been reported by Gerasimenko et al [9], [10]. When comparing the Be profile against a simulation generated using software package Transport of Ions in Matter (TRIM) [11], errors in the straggle of up to 24% were found.…”

“…After implantation, the samples were annealed at temperatures ranging from 450°C to 700°C for 30 s in a nitrogen rich atmosphere. Gerasimenko et al [10] showed that significant Be diffusion occurs at temperatures as low as 400°C, and therefore to minimize the Be diffusion, rapid thermal annealing (RTA) was utilized. Precautions were taken to preserve the stoichiometry at the surface of the semiconductor during annealing.…”