Single crystal growth of Si1 − Ge  by the Czochralski technique

Абросимов, Н.В.; Rossolenko, S. N.; Alex, V.; Gerhardt, A.; Schröder, Wolfgang P.

doi:10.1016/0022-0248(96)00036-x

Cited by 133 publications

(51 citation statements)

References 10 publications

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“…B was introduced during growth at a concentration of 10 15 cm -3 . 24,25 The oxygen and carbon concentrations of the samples were in the range of (5-11) 10 17 cm -3 and (2-5) 10 16 cm -3 , respectively. The samples were irradiated with 2MeV electrons at a temperature of 95 ºC and a fluence of 5x10 17 cm -2 at the Takasaki Jaeri Dynamitron Accelerator.…”

Section: Experimental Methodologymentioning

confidence: 97%

Vacancy-oxygen defects in p-type Si1−xGex

Sgourou

Londos

Chroneos

2014

Journal of Applied Physics

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Oxygen-vacancy defects and in particular the VO pairs (known as A-centers) are common defects in silicon (Si) with a deleterious impact upon its properties. Although oxygenvacancy defects have been extensively studied in Si there is far less information about their properties in p-type doped silicon germanium (Si 1-x Ge x ). Here we use Fourier transform infrared spectroscopy (FTIR) to determine the production and evolution of oxygen-vacancy defects in p-type Si 1-x Ge x . It was determined that the increase of Ge content affects the production and the annealing behavior of the VO defect as well as its conversion to the VO 2 defect. In particular both the VO production and the VO annealing

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Section: Experimental Methodologymentioning

confidence: 97%

Vacancy-oxygen defects in p-type Si1−xGex

Sgourou

Londos

Chroneos

2014

Journal of Applied Physics

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“…6,7) Hence, a large number of studies have been reported for their properties in thin films, in addition, there are several reports for single crystals grown by the Czochralski technique. 8,9) It is widely known that reliable data of thermophysical properties such as thermal conductivity, density, surface tension, and viscosity are indispensable to control a heat and mass transfer process at the solid-liquid interface during crystal growth. In addition, the thermophysical properties of the liquid phase are of particular interest since they play an important role in defining the thermodynamic state and in understanding relations with microscopic structures of the melt.…”

Section: Introductionmentioning

confidence: 99%

Concentration Dependence of Molar Volume of Binary Si Alloys in Liquid State

Mizuno¹,

Kawauchi²,

Tanno³

et al. 2014

ISIJ Int.

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The molar volumes of binary M-Si (M=Fe, Ni, and Ge) alloys in a liquid state were obtained from their densities measured using electromagnetic levitation coupled with a static magnetic field. We have systematically analyzed the molar volume as a function of composition. Although the concentration dependence of the molar volume of the liquid Ge-Si alloys obeys a linear law which is indicative of an ideal mixture, in comparison, that of the Ni-Si alloys shows a large discrepancy from the linear law as well as the Fe-Si system. The interaction between the constituent atoms was discussed with a view to analyzing the partial molar volume.

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“…Other similar solution techniques like travelling heater method (THM) could also potentially benet from a geometry reevaluation [15]. 3. Eect of a static magnetic eld on the dissolution process…”

Section: Remarksmentioning

confidence: 99%

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Armour

Dost

2013

Acta Phys. Pol. A

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The silicon transport in a silicongermanium melt has been studied to address the issues of melt replenishment and seed production for the Czochralski growth of silicon germanium (SiGe) crystals. The growth of SiGe single crystals by the Czochralski method requires that the melt be replenished with silicon during the growth process due to the rejection of germanium into the melt during solidication. To facilitate the replenishment of the melt, an accurate knowledge of the dissolution rate of silicon into the melt and its transport through the melt is required. To address these issues, a number of experiments have been carried out on the dissolution of silicon into a germanium melt. Liquid phase diusion growth experiments were also conducted for insight into transport and as a possible method for seed crystal production. The experiments encompassed various temperatures, crucible geometries, crucible translation, and magnetic eld levels to determine optimum conditions for the most favorable dissolution rates and mass transport in the melt. Results have shown that replenishment from bottom of the crucible is most eective due to the enhanced silicon transport by buoyancy. The application of magnetic elds may also provide an eective mean to control the replenishment rate (mass transport rate) in the melt.

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Single crystal growth of Si1 − Ge by the Czochralski technique

Cited by 133 publications

References 10 publications

Vacancy-oxygen defects in p-type Si1−xGex

Vacancy-oxygen defects in p-type Si1−xGex

Concentration Dependence of Molar Volume of Binary Si Alloys in Liquid State

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

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