Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

Wang, Ying; Lin, Min; Li, Xingji; Wu, Xue; Yang, Jianqun; Bao, Meng-Tian; Yu, Cheng-Hao; Cao, Fei

doi:10.1109/ted.2019.2933026

Cited by 30 publications

(15 citation statements)

References 50 publications

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“…The 4H-SiC JBS diode triggering mechanism mainly includes avalanche thermal and tunnel breakdowns. After the high-energy particles collide with the SiC lattice, electron-hole pairs are generated that change the drift region's electric field distribution [29]. The high peak electric field increases the impact generation rate, causing a large number of charge multiplications and avalanche breakdown.The interaction of incident high-energy particles with the semiconductor leads to defects.…”

Section: Device Structure and Mechanism Descriptionmentioning

confidence: 99%

High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode

Cao

et al. 2021

IEEE J. Electron Devices Soc.

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This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations. The analysis and comparison of conventional 4H-SiC JBS and 4H-SiC Multi-Buffer Layer JBS (MBL-JBS) diodes verify the resistance tolerance of the latter device to SEB. Silvaco TCAD simulation results prove that the 4H-SiC MBL-JBS modulates the drift region's electric field distribution and disperses the high-peak electric field at the N-/N+ junction. Moreover, it reduces the impact generation rate at the Schottky, PN and N-/N+ junctions to achieve SEB tolerance. The device's SEB performance is optimized by adjusting the 4H-SiC MBL-JBS structure parameters, and the SEB threshold voltage is significantly improved compared with the traditional structure.

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Section: Device Structure and Mechanism Descriptionmentioning

confidence: 99%

High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode

Cao

et al. 2021

IEEE J. Electron Devices Soc.

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“…Accordingly, SiC MOSFETs have been used in various applications, including automotives, aerospace, electric vehicle charging infrastructure, power supply, and unmanned aerial vehicles. However, previous studies [6][7][8][9][10][11] have revealed problems due to radiation in SiC MOSFETs. Problems such as an increased leakage current due to heavy ions [6] or threshold voltage shift due to the total ionizing dose (TID) [7], as well as catastrophic damage such as single-event burnout (SEB) [8][9][10][11] have been observed.…”

Section: Introductionmentioning

confidence: 97%

“…However, previous studies [6][7][8][9][10][11] have revealed problems due to radiation in SiC MOSFETs. Problems such as an increased leakage current due to heavy ions [6] or threshold voltage shift due to the total ionizing dose (TID) [7], as well as catastrophic damage such as single-event burnout (SEB) [8][9][10][11] have been observed. Therefore, reliability in radiation environments is important for the stable operation of various applications.…”

Section: Introductionmentioning

confidence: 97%

“…Therefore, the displacement damage in an SiC crystal would be accumulated overtime in terrestrial applications such as electrical vehicles, industry motor drives, and solar inverters. Furthermore, in particle-enriched environments, SiC MOSFETs become even more vulnerable to radiation, leading to device degradation and system failure [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Lee

Kim

et al. 2022

Micromachines

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The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed. Compared with the shallow defect energy level, the deepest defect energy level with EC − 1.55 eV exhibits considerable degradation. The on-current decreases by 54% and on-resistance increases by 293% due to the displacement defect generated at the parasitic junction field-effect transistor (JFET) region next to the P-well. Due to the existence of a defect in the drift region, the breakdown voltage increased up to 21 V. In the double-pulse switching test, the impact of displacement defect on the power loss of SiC MOSFETs is negligible.

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“…Impacts of electrical stress [9] and reverse gate voltage [10] were also evaluated. Some studies estimated the location of the sensitive volume for initiating SEB in SiC-MOSFET through numerical simulations [11,12]. Moreover, in this reference [12], the authors study the difference between heavy ion and neutron-induced SEB, showing that in the special case of neutron irradiation the sensitive volume is near the epitaxial-substrate junction.…”

Section: Introductionmentioning

confidence: 99%

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Germanicus

Niskanen

Michez

et al. 2022

MSF

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Dealing with electronic devices for high reliability applications in terrestrial environments, neutron-induced Single Event Effects must be investigated. In this paper, the experimental observation of an atmospheric-like neutron-induced Single Event Burnout (SEB) on a packaged commercial SiC power MOSFET is presented after irradiation at ISIS-ChipIr. The effects of the SEB in the electrical properties of the MOSFET are established, and the SiC damaged zone is observed by scanning electron microscopy. Based on this failure analysis at the die level, the distinct stages during the SEB mechanism can be defined. The sensitive volume where the secondary particle deposited enough energy to trigger the SEB mechanism is identified and located inside the SiC n-drift epitaxial layer near the epitaxial layer/substrate junction.

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Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

Cited by 30 publications

References 50 publications

High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode

High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

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