2018
DOI: 10.1109/tns.2017.2779831
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Single-Event Latch-Up: Increased Sensitivity From Planar to FinFET

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Cited by 29 publications
(10 citation statements)
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“…2(c)], is still significant and exhibits complex responses to device design. As suggested in [50], SEL depends on parameters that do not always shrink along with device scaling, such as the dimension of wells and the depth of Shallow-Trench Isolation (STI). Hence, SEL is not addressed here-A literature survey, however, suggests that CMOS digital ICs generally become less sensitive to SEL along with the scaling of power supply voltage ( DD ) [51,Fig.…”
Section: A Tested Sees and Devicesmentioning
confidence: 99%
“…2(c)], is still significant and exhibits complex responses to device design. As suggested in [50], SEL depends on parameters that do not always shrink along with device scaling, such as the dimension of wells and the depth of Shallow-Trench Isolation (STI). Hence, SEL is not addressed here-A literature survey, however, suggests that CMOS digital ICs generally become less sensitive to SEL along with the scaling of power supply voltage ( DD ) [51,Fig.…”
Section: A Tested Sees and Devicesmentioning
confidence: 99%
“…As discussed above, the SEL rates seen in DB5 could be eliminated by migrating back to Ultrascale FPGAs with a 20 nm TMSC planar technology, where SELs have not been observed [6]. One disadvantage of this migration from the KU+ architecture to the KU architecture is that the SEU rate is expected to increase by a factor of approximately 16 [5].…”
Section: Redesigning the Daughterboardmentioning
confidence: 99%
“…As discussed above, the SEL rates seen in DB5 could be eliminated by migrating back to Ultrascale FPGAs with a 20-nm planar technology (TSMC), where SELs have not been observed [6]. One disadvantage of this migration from the KU+ architecture to the KU architecture is that the SEU rate is expected to increase by a factor of approximately 16 [5].…”
Section: Redesigning the Dbmentioning
confidence: 99%