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An estimate of Hubbard U supports instability of neutral one-electron Si dangling bonds in SiO2 and the formation of charged two-electron and two-hole negative U centers through the reaction Si•+Si•→Si++Si−••. The trapping on these negative U centers creates and annihilates “dents” in the thin barrier for electron and hole tunneling through the gate oxide. Such dents are visible as gate current low frequency fluctuations (1∕f noise). The longer trapping time of holes causes irreversible Si−••→Si+ conversion, which leads to stress-induced leakage current and accumulation of positive charge in the oxide under voltage stress.

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