Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

Chang, Yung-Cheng; Peng, Peng‐Chun; Tsai, Wei‐Chi; Lin, Gray; Lai, Fang‐I; Hsiao, R. S.; Hong, Yang; Yu, Hsin-Chieh; Lin, Kuo‐Hung; Chi, J.Y.; Wang, S.C.; Kuo, Hao‐Chung

doi:10.1109/lpt.2006.871831

Cited by 42 publications

(22 citation statements)

References 11 publications

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“…1) is similar to those reported by Yu et al [9] and Chang et al [10]. The concept of the QD inside the quantum well (QW) has been utilized [13].…”

Section: The Structuresupporting

confidence: 81%

“…Therefore VCSELs equipped with rather longer cavities of the lengths equal to at least 3l may be such sources. This result is sup− ported by papers reporting successful operation of VCSELs equipped with three [9] and five [10] groups of three QDs. The above limiting value of g th of about 1000 cm -1 may be increased using more uniform QDs and/or their higher sur− face densities.…”

Section: Resultsmentioning

confidence: 59%

“…have been extracted from the experimental threshold values (U th = 7 V, I th = 1.8 mA) reported by Chang et al for a very similar laser design [10]. A relative high threshold value of the above voltage is a result of relatively high current− spreading resistance of the upper p−type GaAs/Al 0.9 Ga 0.1 As DBR because of its relatively low doping to reduce radia− tion absorption.…”

Section: Resultsmentioning

confidence: 99%

“…Hence in− stead of single−QD layers, stacks of several QD layers have been applied [7,8]. Currently, even several such stacks of QD layers are located within a laser active region [9,10]. They should be appropriately arranged within a laser cavity to increase an interaction between electromagnetic field and free carriers taking part in a radiative recombination.…”

Section: Introductionmentioning

confidence: 99%

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Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Piskorski

Wasiak

Sarzała

et al. 2009

Opto-Electronics Review

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Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP01 mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.

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“…1) is similar to those reported by Yu et al [9] and Chang et al [10]. The concept of the QD inside the quantum well (QW) has been utilized [13].…”

Section: The Structuresupporting

confidence: 81%

Section: Resultsmentioning

confidence: 59%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Piskorski

Wasiak

Sarzała

et al. 2009

Opto-Electronics Review

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show abstract

“…Besides, at both active-region edges, additional single InGaAs QWs are located containing single QD layers. The above active-region structure is similar (but not identical) to those reported by Yu et al [25] and Chang et al [26]. At RT, maximum of the active-region In(Ga)As/GaAs QD gain spectrum corresponds to about 1260 nm and its half-width is equal to about 30 nm only [1].…”

Section: The Structuresupporting

confidence: 87%

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Sarzała

Piskorski

2010

Appl. Phys. A

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The comprehensive optical-electrical-thermalrecombination self-consistent VCSEL model is used to compare the performance of oxide-confined (OC) and protonimplanted (PI) VCSELs and to optimise their structures. Generally index-guided (IG) OC VCSELs demonstrate lower lasing thresholds whereas both gain-guided (GG) OC and PI ones manifest much better mode selectivity. Therefore, their either low-threshold IG or mode-selective GG versions may be intentionally used for different VCSEL applications. Lasing thresholds of OC IG VCSELs have been found to be very sensitive to the exact localisation of their thin oxide apertures, which should be shifted as close as possible towards the anti-node position. PI VCSELs, on the other hand, are simpler and cheaper in their manufacturing than OC ones. Although lower threshold currents are manifested by PI VCSELs with very thick implanted regions, lower threshold powers are achieved in these devices with much thicker upper unaffected layer used for the radial current flow from the ring contact towards the laser axis. Paradoxically poor thermal properties of PI VCSELs enable lower lasing thresholds of slightly detuned devices. To conclude, cheaper and mode-selective PI VCSELs may be used instead of OC ones in many of their applications provided ambient temperatures and laser outputs are not too high.

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GaInNAs(Sb) surface normal devices

Calvez

Laurand

Sun

et al. 2008

Physica Status Solidi (a)

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Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

Cited by 42 publications

References 11 publications

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

GaInNAs(Sb) surface normal devices

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