Site-controlled self-assembled InAs quantum dots grown on GaAs substrates

Abstract

Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).

Kinetic Monte Carlo simulations of optimization of self-assembly quantum rings growth strategy based on substrate engineering

“…In order to accomplish the self-assembly process of the QRs based on the latticemismatched system, people provide many kinds of methods by changing the structure of the substrate. [12][13][14][15][16] It proves that the way of embedding the QDs in the substrate could be used to fabricate QRs. Self-organization technology with a cap layer is suitable for the lattice mismatched system.…”