Small-signal model parameter extraction for AlGaN/GaN HEMT

Abstract

A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor (HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions (Ggsf and Ggdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance.

High-Frequency Graphene Base Hot-Electron Transistor

“…Figure 4d illustrates the occurrence of the aforementioned scenario through the changes in the band structures between the bilayer dielectrics under different V CB biases. We also constructed an equivalent circuit model (shown in Supporting Information Figure S11b) to figure out the influence of the extrinsic 46 and intrinsic 47 parts by using the Advanced Design System software. The simulated results fitted well with experimental data before and after the de-embedding process, as shown in Supporting Information Figure S11.…”

Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

“…Extrinsic pad capacitances (C pg , C pgd , C pd ) of the device is mostly extracted from the cold‐FET method . When V ds =0 V and V gs is less than the negative pinch‐off voltage, the channel conductivity is insignificant and simulated S‐parameters of the passive device shows capacitive behavior . In this case, the intrinsic gate‐source and gate‐drain capacitances are equal but the extrinsic pad capacitances are not equal although their difference can be negligible.…”

“…In this case, the intrinsic gate‐source and gate‐drain capacitances are equal but the extrinsic pad capacitances are not equal although their difference can be negligible. The resistances and inductances can be neglected due to negligible conductance and intrinsic gate capacitance upto few gigahertz frequencies . The three pad capacitances C pg , C pd , and C pgd can be calculated from slope of the imaginary parts of the Y‐parameters Y 11 , Y 22 , and Y 12 =Y 21 , respectively as shown in Figure .…”

“…20 When V ds 50 V and V gs is less than the negative pinch-off voltage, the channel conductivity is insignificant and simulated Sparameters of the passive device shows capacitive behavior. 15,19,28 In this case, the intrinsic gate-source and gatedrain capacitances are equal but the extrinsic pad capacitances are not equal although their difference can be negligible. The resistances and inductances can be neglected due to negligible conductance and intrinsic gate capacitance upto few gigahertz frequencies.…”

“…The resistances and inductances can be neglected due to negligible conductance and intrinsic gate capacitance upto few gigahertz frequencies. 15,28 The three pad capacitances C pg , C pd , and C pgd can be calculated from slope of the imaginary parts of the Y-parameters Y 11 , Y 22 , and Y 12 5Y 21 , respectively as shown in Figure 3.…”