"Smart cut": a promising new SOI material technology

Bruel, M.; Aspar, B.; Charlet, B.; Maleville, Christophe; Poumeyrol, T.; Soubie, A.; Auberton‐Hervé, A.J.; Lamure, J.M.; Barge, T.; Metral, F.; Trucchi, S.

doi:10.1109/soi.1995.526518

Cited by 47 publications

(21 citation statements)

References 3 publications

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“…1 Recently, a process for SOI technology has emerged, called Smart Cut. [2][3][4] In the Smart Cut process, the cleavage of the silicon wafer is obtained by hydrogen implantation and subsequent annealing. The implanted hydrogen develops regions of high internal pressure created by the agglomeration of the implanted hydrogen into bubbles.…”

Section: ͓S0003-6951͑99͒00851-7͔mentioning

confidence: 99%

Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon

Höchbauer

Nastasi

Mayer

1999

Applied Physics Letters

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Section: ͓S0003-6951͑99͒00851-7͔mentioning

confidence: 99%

Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon

Höchbauer

Nastasi

Mayer

1999

Applied Physics Letters

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“…Recently, the approach of layer transfers by ion implantation and wafer bonding, well-known from silicon technology [1], has been applied in order to achieving high quality single crystalline ferroelectric layers with the prospect of their integration into silicon technology. This method, also known as "smart-cut R ," "layer splitting" or "layer exfoliation," was first introduced by Bruel [2] in 1995 as a highly effective method for the fabrication of high quality silicon-on-insulator (SOI) wafers. Briefly, a donor wafer is implanted with helium and/or hydrogen at appropriate energy with doses ranging from 10 16 up to 10 17 cm −2 [3].…”

Section: Introductionmentioning

confidence: 99%

Single-Crystalline Ferroelectric Thin Films by Ion Implantation and Direct Wafer Bonding

Szafraniak

Radu

Scholz

et al. 2003

Integrated Ferroelectrics

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Layer splitting by helium and/or hydrogen implantation and wafer bonding was applied to transfer thin single-crystalline ferroelectric layers onto different substrates. The optimum conditions for achieving blistering/splitting after post-implantation annealing were experimentally obtained for LiNbO 3 , LaAlO 3 , SrTiO 3 single crystals and PLZT ceramic. Under certain implantation conditions large area exfoliation instead of blistering occurs after annealing of as-implanted substrates. Small area single-crystalline layer transfer was successfully achieved.

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“…It is expected that the passivation structure is compatible with the preferred process to build SOI wafers [12]. These wafers can be used to build RF communication systems.…”

Section: Discussionmentioning

confidence: 99%

Identification of RF Harmonic Distortion on Si Substrates and its Reduction Using a Trap-Rich Layer

Kerr

Gering

McKay³

et al. 2008

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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Harmonic distortion (HD) is measured arising from coplanar waveguide structures on various substrates at 900 MHz, and significant distortion for silicon substrates is demonstrated for the first time. For an input power of +35 dBm, 2 nd harmonic power of -47 dBm and 3 rd of -57 dBm are measured for a thru calibration structure on oxidized high-resistivity silicon (HRS) substrates, and 2 nd harmonic of -23 and 3 rd of -20 dBm for a longer line on a thinner oxide. These levels are high compared to a full cellular transmit switch product specification of -45 and -40 dBm for 2 nd and 3 rd harmonics, respectively, at similar power levels. The contribution of the silicon substrate to high harmonic levels is investigated experimentally, and an efficient technological solution based on the introduction of a trap-rich layer is demonstrated.

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"Smart cut": a promising new SOI material technology

Cited by 47 publications

References 3 publications

Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon

Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon

Single-Crystalline Ferroelectric Thin Films by Ion Implantation and Direct Wafer Bonding

Identification of RF Harmonic Distortion on Si Substrates and its Reduction Using a Trap-Rich Layer

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