Smoothing of ZnO films by gas cluster ion beam

Chen, H.; Liu, S.W.; Wang, X.M.; Iliev, M. N.; Chen, C.L.; Yu, Xiangkun; Liu, J.R.; Ma, K.B.; Chu, W. K.

doi:10.1016/j.nimb.2005.07.100

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Cited by 7 publications

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“…The removal rate and the surface root mean square roughness could reach 67 nm/min and 6 Å respectively, though the removal rate was low. There are some other methods to flat ZnO thin films such as gas cluster ion beam [15] and electron cyclotron resonance (ECR) system [16]. Both of them, the mechanism of material removal is more due to the physical sputtering than due to chemical reaction and abrasive, i.e.…”

Section: Introductionmentioning

confidence: 99%

Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices

Zhang

Taofeng

Wang

et al. 2013

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices

Zhang

Taofeng

Wang

et al. 2013

Microelectronic Engineering

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Molecular dynamics simulations of cluster impacts on solid targets: implantation, surface modification, and sputtering

Aoki

2013

J Comput Electron

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The collisions of cluster projectiles on solid targets were studied using molecular dynamics (MD) simulations. The penetration range and damage induced by small boron and carbon cluster implantations are compared with those induced by monomers with the same energy per atom. The simulations indicated enhanced penetration depth and the formation of dense track damage at the surface region. In addition, large argon and fluorine clusters (up to 1 million atoms) have shown effects such as crater formation and low-damage surface etching of silicon. The MD simulations revealed that cluster penetration and crater formation depends not on the total incident energy, but on the incident energy per atom, and that the damage threshold for the argon cluster is several eV/atom. In the impact of a very large and slow fluorine cluster on silicon, an enhancement of chemical reactivity at the near surface region was observed because of the high density of fluorine molecules depositing kinetic energy.

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