SnSe Nanoplates for Photodetectors with a High Signal/Noise Ratio

Wang, Han; Zhang, Songqing; Zhang, Tingze; Liu, Junliang; Zhang, Zekai; Yuan, Guang; Liang, Yujun; Tan, Jun; Ren, Yuchen; Lei, Wen

doi:10.1021/acsanm.1c02595

Cited by 23 publications

(7 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The excited photocurrent (I ph ) of the phototransistor can be fitted by the power equation: I ph ∼ P 𝜶 , where the 𝛼 can be extracted (0.31-0.32) at various drain voltages (Figure 4c). The photoresponsivity (R) and specific detectivity (D * ) are the key indicators of the photodetector, which can be defined as follows: [64][65][66][67]…”

Section: Resultsmentioning

confidence: 99%

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Qu,

Cheng,

Lan

et al. 2024

Small

View full text Add to dashboard Cite

As p‐type phase‐change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two‐dimensional (2D) p‐type GeTe nanosheets are synthesized via a specially designed space‐confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space‐confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p‐type semiconductor properties, such as a satisfactory on/off ratio of 105. Temperature‐dependent electrical measurements demonstrate that variable‐range hopping and optical‐phonon‐assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W−1 at 633 and 980 nm, respectively) and detectivity (1.67 × 1011 and 1.3 × 108 Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near‐infrared range. Furthermore, the fabricated GeTe/WS2 diode exhibits a rectification ratio of 103 at zero gate voltage. These satisfactory p‐type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.

show abstract

Section: Resultsmentioning

confidence: 99%

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Qu,

Cheng,

Lan

et al. 2024

Small

View full text Add to dashboard Cite

show abstract

“…P light is the light density on the heterojunction, and I ph is the photocurrent. Moreover, detectivity (D*) is used to describe the detection ability of the detector to the optical signal, which can be calculated using the following formula [23]:…”

Section: Resultsmentioning

confidence: 99%

High-Performance Self-Driven SnSe/Si Heterojunction Photovoltaic Photodetector

et al. 2023

View full text Add to dashboard Cite

Tin monoselenide (SnSe), which belongs to group IV–VI monochalcogenides, has obtained significant attention in the field of photodetection owing to its ultrahigh carrier mobilities. However, the great challenges of preparing high-quality films and high-performance devices still need to be conquered. Herein, high-density continuous SnSe films were deposited on a Si substrate using magnetron sputtering technology, and a self-driven photovoltaic-type broadband photodetector from the visible light range (VIS) to the near-infrared (NIR) range based on SnSe/Si heterojunction was constructed. Owing to its high carrier mobility, narrow band gap structure, and strong internal electric field, the SnSe/Si heterojunction device exhibits an ultrafast response and high responsivity (R), which achieves a wide spectral response of 405–980 nm. Under zero bias voltage, the greatest R and detectivity (D*) of the heterojunction were 704.6 mA/W and 3.36 × 1011 Jones at 405 nm. Furthermore, the device had a fast response time (rise time) of 20.4 μs at 980 nm of illumination. This work provides a new strategy for the fabrication of high-performance, low-cost, and self-driven photodetectors.

show abstract

“…Generally, the photodetectors with large D * values have better performance. It is worth noting that for FeFETs based on 2D material, the on/ off ratios are mostly 10 3 -10 6 , and ever some can reach 10 10 , which means that the operating current I on is several orders of magnitude higher than the dark current I off [53][54][55][56]. Therefore, using the dark current at zero bias as the noise current of the photodetector to estimate the value of D * is inappropriate and will result in a large value of D * .…”

Section: Key Performance Indicators Of Photodetectorsmentioning

confidence: 99%

2D materials-based photodetectors combined with ferroelectrics

Bai,

Wu,

Yang

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current “Internet of Things” era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.

show abstract

SnSe Nanoplates for Photodetectors with a High Signal/Noise Ratio

Cited by 23 publications

References 30 publications

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

High-Performance Self-Driven SnSe/Si Heterojunction Photovoltaic Photodetector

2D materials-based photodetectors combined with ferroelectrics

Contact Info

Product

Resources

About