Solid-State Memcapacitors and Their Applications

Flak, Jacek; Poikonen, Jonne

doi:10.1007/978-3-319-02630-5_26

Cited by 11 publications

(12 citation statements)

References 18 publications

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“…where q (t) and v (t) represent charge quantity at time t and the corresponding memcapacitor voltage, respectively; x is the memcapacitor internal variable, and C M and C M 1 represent the memcapacitance and inverse memcapacitance, respectively [56,57]. In general, C M ( )  and f (K) represent nonlinear functions, which depend on the concrete physical implementation of memcapacitors.…”

Section: Physical Structure Of Memcapacitor and Switching Mechanismmentioning

confidence: 99%

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A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

Abbasi¹,

Setoudeh²,

Tavakoli³

et al. 2022

Nanotechnology

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The present paper proposes a six-FinFET two-memcapacitor (6T2MC) non-volatile static random-access memory (NVSRAM). In this design, the two memcapacitors are used as non-volatile memory elements. The proposed cell is flexible against data loss when turned off and offers significant improvement in read and write operations compared to previous NVSRAMs. The performance of the new NVSRAM design is evaluated in terms of read and write operation at particular nanometric feature sizes. Moreover, the proposed 6T2MC cell is compared with 8T2R, 8T1R, 7T1R, and 7T2R cells. The results show that 6T2MC has a 5.50% lower write delay and 98.35% lower read delay compared to 7T2R and 7T1R cells, respectively. The 6T2MC cell exhibits 38.86% lower power consumption and 23.80% lower leakage power than 7T2R and 7T1R cells. The proposed cell is significantly improved in terms of HSNM, RSNM, and WSNM compared to 8T2R, 8T1R, 7T2R, and 7T1R cells, respectively. Important cell parameters, such as power consumption, data read/write delay, and SNM, are significantly improved. The superior characteristics of FinFET over MOSFET and the combination of this technology with memcapacitors lead to significant improvement in the proposed design.

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Section: Physical Structure Of Memcapacitor and Switching Mechanismmentioning

confidence: 99%

“…where C max and C min denote the maximum capacitance of the memcapacitor for the maximum applied voltage and the minimum capacitance for the zero applied voltage, respectively [56,57].…”

Section: Physical Structure Of Memcapacitor and Switching Mechanismmentioning

confidence: 99%

A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

Abbasi¹,

Setoudeh²,

Tavakoli³

et al. 2022

Nanotechnology

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“…Similarly, they defined an nth-order charge-controlled memcapacitive system as V c (t) = C −1 (x, q, t)q(t), (6.2a) x = f (x, q, t), (6.2b) where C −1 is an inverse memcapacitance. [4,5] They defined a subclass of the memcapacitive devices by deducing the voltagecontrolled memcapacitive systems equation to (6.3) to represent the voltagecontrolled memcapacitor. (6.3) and the charge-controlled memcapacitive systems equation to (6.4) to represent the nth charge-controlled memcapacitor.…”

Section: Memcapacitive Systemsmentioning

confidence: 99%

Memcapacitor: Modeling, Analysis, and Emulators

Radwan

Fouda

2015

Studies in Systems, Decision and Control

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“…1(a). Previously we pointed out that ferroelectric capacitors are a kind of memcapacitors [2], and there is no doubt about such classification [15]. We have performed experimental measurements of the q − V curves of a lead zirconate titanate (PZT) ferroelectric capacitor using a simple capacitor-ferroelectric capacitor circuit shown in the inset of Fig.…”

mentioning

confidence: 99%

Comment on ‘If it's pinched it's a memristor’

Pershin

Ventra

2019

Semicond. Sci. Technol.

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In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a correspondence between the hysteresis curves of different types of memory elements. This leads the author to the erroneous conclusion that chargevoltage curves of any memcapacitive devices should be pinched at the origin. The purpose of this Comment is to correct the wrong statements in Chua's paper, as well as to highlight some other inconsistencies in his reasoning. We also provide experimental evidence of a memcapacitive device showing non-pinched hysteresis.

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Solid-State Memcapacitors and Their Applications

Cited by 11 publications

References 18 publications

A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

Memcapacitor: Modeling, Analysis, and Emulators

Comment on ‘If it's pinched it's a memristor’

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