Solvothermal Synthesis of Gallium and Indium Nitrides Using Lithium Amide

Chirico, Pietro; Hector, Andrew L.

doi:10.1515/znb-2010-0812

Cited by 7 publications

(4 citation statements)

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“…However, there have been just a few papers reporting the synthesis of Ga x In 1− x N nanoparticles using a scalable, mere chemical route that is also good for particles with high indium contents (for which problems with gas‐phase techniques arise because of the high volatility of In) 18. Syntheses based on metathesis reactions between lithium amide and the metal halide (of Ga or In) to prepare pure GaN and InN are known,19, 20 whereas the preparation of their alloy was not reported. Rao et al 21.…”

Section: Introductionmentioning

confidence: 99%

GaN and Ga_xIn_1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

Lei

Willinger

Antonietti

et al. 2015

Chemistry A European J

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Semiconducting GaN and GaxIn1-xN nanoparticles (4-10 nm in diameter, depending on the metal ratio) with tunable indium content are prepared through a chemical synthesis (the urea-glass route). The bandgap of the ternary system depends on its composition, and therefore, the color of the final material can be turned from bright yellow (the color of pure GaN) to blue (the color of pure InN). Transmission electron microscopy (TEM and HRTEM) and scanning electron microscopy (SEM) images confirm the nanoparticle character and homogeneity of the as-prepared samples. X-ray diffraction (XRD), electron diffraction (EDX), elemental mapping, and UV/Vis, IR, and Raman spectroscopy investigations are used to confirm the incorporation of indium into the crystal structure of GaN. These nanoparticles, possessing adjusted optical properties, are expected to have potential applications in the fabrication of novel optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

GaN and Ga_xIn_1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

Lei

Willinger

Antonietti

et al. 2015

Chemistry A European J

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“…This has been argued as the reason why In 3+ from InI 3 is less liable to be reduced to elemental indium [13]. The reaction with InCl 3 yields InN contaminated with In metal, even at relatively low reaction temperatures of 200 • C. Chirico et al demonstrated that the use of LiNH 2 , or substituting InI 3 for InCl 3 , reduced the amount of In in the resulting products, yet did not eliminate it [32].…”

Section: Introductionmentioning

confidence: 99%

Sonochemical Synthesis of Indium Nitride Nanoparticles and Photocatalytic Composites with Titania

Paraskevopoulou,

Pandis,

Argirusis

et al. 2024

Ceramics

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Indium nitride is an excellent semiconductor that belongs to the group of III nitride materials. Due to its unique properties, it is applied to various optoelectronic applications. However, its low thermal stability makes it difficult to synthesize. The present study introduces the synthesis of indium nitride nanoparticles, using ultrasound power (sonochemistry). The sonochemical method provides a low-cost and rapid technique for nanomaterial synthesis. InN nanoparticles were produced in only 3 h through the sonochemical reaction of InCl3 and LiN3. Xylene was used as a reaction solvent. X-ray powder diffraction (XRD) as well as high-resolution transmission electron microscopy (HRTEM) were adopted for the characterization of the obtained powder. According to our results, ultrasound contributed to the synthesis of InN nanocrystals in a cubic and a hexagonal phase. The obtained InN nanoparticles were further used to decorate titanium dioxide (TiO2) by means of ultrasound. The contribution of InN nanoparticles on the processes of photocatalysis was investigated through the degradation of methylene blue (MB), a typical organic substance acting in place of an environment pollutant. According to the obtained results, InN nanoparticles improved the photocatalytic activity of TiO2 by 41.8% compared with commercial micrometric titania.

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“…Moreover, the synthesis of bulk crystalline InN is even more complex and tricky due to high instability of the In–N bond. In the case of profitable attempts, the reactions often occur under harsh conditions, through the use of toxic, polluting, and very hazardous reactants, such as ammonothermal growth from InCl 3 and KNH 2 in supercritical ammonia at 2.8 kbar, solvothermal reaction of InCl 3 /InI 3 with LiNH 2 in benzene, microwave plasma sources at sub-atmospheric pressure by saturating indium with nitrogen, low-temperature synthesis via nitridation of LiInO 2 or In(OH) 3 with NaNH 2 flux in an autoclave, nitridation of In 2 O 3 and In(OH) 3 with NH 3 at 600 °C, and solid-state exchange reaction between Ga/InI 3 and Li 3 N or InBr 3 and NaN 3 . Despite the different methods and conditions, the reactions have a very low yield, somehow producing well shaped μm-scale crystals, but rarely a pure bulk product.…”

Section: Introductionmentioning

confidence: 99%

High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus

et al. 2023

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We present a new method to synthesize bulk indium nitride by means of a simple solid-state chemical reaction carried out under hydrostatic high-pressure/high-temperature conditions in a multi-anvil apparatus, not involving gases or solvents during the process. The reaction occurs between the binary oxide In 2 O 3 and the highly reactive Li 3 N as the nitrogen source, in the powder form. The formation of the hexagonal phase of InN, occurring at 350 °C and P ≥ 3 GPa, was successfully confirmed by powder X-ray diffraction, with the presence of Li 2 O as a unique byproduct. A simple washing process in weak acidic solution followed by centrifugation allowed us to obtain pure InN polycrystalline powders as a precipitate. With an analogous procedure, it was possible to obtain pure bulk GaN, from Ga 2 O 3 and Li 3 N at T ≥ 600 °C and P ≥ 2.5 GPa. These results point out, particularly for InN, a clean, and innovative way to produce significant quantities of one of the most promising nitrides in the field of electronics and energy technologies.

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Solvothermal Synthesis of Gallium and Indium Nitrides Using Lithium Amide

Cited by 7 publications

References 0 publications

GaN and Ga_xIn_1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

GaN and Ga_xIn_1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

Sonochemical Synthesis of Indium Nitride Nanoparticles and Photocatalytic Composites with Titania

High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus

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Solvothermal Synthesis of Gallium and Indium Nitrides Using Lithium Amide

Cited by 7 publications

References 0 publications

GaN and GaxIn1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

GaN and GaxIn1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

Sonochemical Synthesis of Indium Nitride Nanoparticles and Photocatalytic Composites with Titania

High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus

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GaN and Ga_xIn_1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

GaN and Ga_xIn_1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization