Spatial Distribution Measurement of Microwave Electric Field Using Thermal Sensitive Paper in a Microwave Etching System

Watanabe, Seiichi; Furuse, Muneo; Watanabe, Katsuya; Kawasaki, S.

doi:10.1143/jjap.34.l921

Cited by 12 publications

(1 citation statement)

References 16 publications

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“…A microwave of circular TE11 mode propagating in the circular waveguide is partially translated to a circular TE01 mode by the microwave circuit over the quartz window. [9][10][11] The profiles of the electric field strength of the TE11 mode, TE01 mode, and the composite mode of TE11 + TE01, which are numerically calculated in a circular waveguide of 500 mm diameter using the finite element method (FEM) solver for electromagnetic wave propagation, are shown in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Maeda¹,

Obama²,

Tamura³

et al. 2012

Jpn. J. Appl. Phys.

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A newly designed microwave electron cyclotron resonance (ECR) plasma etching reactor has been developed for 450 mm wafer processing. The etching rates of polycrystalline silicon (poly-Si) and SiO 2 across the wafer were evaluated as a function of ECR position. Two-dimensional (radial and vertical) distributions of the ion flux in the reactor were also investigated using a movable single probe system. A ring-shaped region of highdensity plasma along the ECR plane was observed. This reveals the mechanism that the etching-rate distribution could be controlled by the ECR position. As a result, a polycrystalline silicon etching rate uniformity of 1.5% across a wafer was successfully obtained. Furthermore, the uniformity control of critical dimensions (CDs) based on wafer temperature was also investigated, and CD uniformity below 3 nm across the wafer was obtained in the optimum temperature distribution. #

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Section: Resultsmentioning

confidence: 99%

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Maeda¹,

Obama²,

Tamura³

et al. 2012

Jpn. J. Appl. Phys.

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Development of a locally-electron-heated plasma source for HDP-CVD process

Seki¹,

Ueno²,

Ichimura³

et al. 1998

Vacuum

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11 – 13 GHz electron cyclotron resonance plasma source using cylindrically comb-shaped magnetic-field configuration for broad ion-beam processing

Asaji

Kato

Sato

et al. 2006

Review of Scientific Instruments

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An electron cyclotron resonance (ECR) plasma source for broad ion-beam processing has been upgraded by a cylindrically comb-shaped magnetic-field configuration and 11–13GHz frequency microwaves. A pair of comb-shaped magnets surrounds a large-bore discharge chamber. The magnetic field well confines plasmas with suppressing diffusion toward the axial direction of the cylindrical chamber. The magnetic field is constructed with a multipole and two quasiring permanent magnets. The plasma density clearly increases as compared with that in a simple multipole magnetic-field configuration. The frequency of microwaves output from the traveling-wave tube amplifier can be easily changed with an input signal source. The plasma density for 13GHz is higher than that for 11GHz. The maximum plasma density has reached approximately 1018m−3 at a microwave power of only 350W and a pressure of 1.0Pa. The enhancement of plasma generation by second-harmonic resonance and microwave modes has been investigated. The plasma density and the electron temperature are raised around the second-harmonic resonance zone. And then, the ion saturation current is periodically increased with varying the position of the plate tuner. The distance between the peaks is nearly equal to half of the free-space wavelength of microwave. The efficiency of ECR has been improved by using the comb-shaped magnetic field and raising microwave frequency, and then the high-density plasma source has been accomplished at low microwave power.

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Spatial Distribution Measurement of Microwave Electric Field Using Thermal Sensitive Paper in a Microwave Etching System

Cited by 12 publications

References 16 publications

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Development of a locally-electron-heated plasma source for HDP-CVD process

11 – 13 GHz electron cyclotron resonance plasma source using cylindrically comb-shaped magnetic-field configuration for broad ion-beam processing

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