Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

Lee, B.; Arai, Ken‐ichi; Skromme, Brian; Bose, Sukanta; Roth, Thomas; Aguilar, Jonathan; Lepkowski, T. R.; Tien, N. C.; Stillman, G. E.

doi:10.1063/1.344040

Cited by 8 publications

(1 citation statement)

References 32 publications

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“…The Hall measurement also indicates an n‐type carrier concentration of 4.0·10 16 cm −3 in GaP grown on SI‐GaAs, due to an unintentional incorporation of Si caused by the reaction of HCl and the quartz reactor wall. It was reported that Si incorporation can be suppressed in HVPE‐grown GaAs by injecting O 2 over molten Ga . To enhance the purity of GaP, injection of O 2 during HVPE growth is a promising approach and worth the attention in future research.…”

Section: Resultsmentioning

confidence: 99%

Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

Strömberg

Omanakuttan

et al. 2019

Physica Status Solidi (a)

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Heteroepitaxial growth of orientation-patterned (OP) GaP (OP-GaP) on wafer-bonded OP-GaAs templates is investigated by low-pressure hydride vapor phase epitaxy for exploiting the beneficial low two-photon absorption properties of GaP with the matured processing technologies and higher-quality substrates afforded by GaAs. -First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [110]-oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP-GaP on OP-GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP-GaP on OP-GaAs is studied. High OP-GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h À1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi-insulating GaAs is studied by terahertz time-domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP-GaP growth on OP-GaAs for frequency conversion by quasi-phase-matching in the mid-infrared and terahertz regions.

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Section: Resultsmentioning

confidence: 99%