Spectroscopy of neutron irradiation induced deep levels in silicon by microwave probed photoconductivity transients

Gaubas, E.; Uleckas, A.; Vaitkus, J.

doi:10.1016/j.nima.2009.03.136

Cited by 9 publications

(10 citation statements)

References 6 publications

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“…Then reduction of stored charge and of diffusion length of the injected carriers leads to a decrease of forward current within transient, if carrier lifetime becomes shorter than that of LIV pulse. This result is in excellent agreement with carrier lifetime values measured directly using a microwave probed photoconductivity transients (MW-PCD) [10] for the same samples. Reduction of the C bo is determined by an enhancement of the density of compensating centers, and it is reduced to C geom when equilibrium depletion width approaches to a sample thickness.…”

Section: Fluence Temperature and External Steady-state Bias-dependesupporting

confidence: 86%

“…However, contrary to reverse biasing (1), where charge extraction causes a negative constituent U R dC b /dU R , the barrier capacitance current component shows a positive derivative U F dC b /dU F > 0 for the forward-biased diode. This is determined by a denominator function within the first constituent of (10). The amplitude of the BELIV current, during rearward phase of BELIV current transient, exponentially increases due to i Cdif and i dif for the short LIV pulses (Figure 6(a)).…”

Section: Charge Injection Beliv Regimementioning

confidence: 99%

“…This enables to ignore the nonlinear voltage sharing between R L − C b0 elements of circuit. The numerical simulations, using approximations described in (1)- (3), (4)- (8), (10) and U c (t) = U P (t) − i (t)(R L + R s| | (t)), are inevitable when both high precision and wide range of voltages are desirable. Here, R s|| (t) represents a serial bulk resistance which can be approximated as R s|| (t) = (d − w(t))/Se μn(t).…”

Section: Fluence Temperature and External Steady-state Bias-dependementioning

confidence: 99%

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Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Gaubas

Čeponis

Kalendra

et al. 2012

ISRN Materials Science

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Technique for barrier evaluation by measurements of current transients induced by linearly increasing voltage pulse based on analysis of barrier and diffusion capacitance changes is presented. The components of the barrier capacitance charging and generation/recombination currents are discussed. Different situations of the impact of deep center defects on barrier and diffusion capacitance changes are analyzed. Basics of the profiling of layered junction structures using the presented technique are discussed. Instrumentation for implementation of this technique and for investigations of the steady-state bias infra-red illumination and temperature dependent variations of the barrier capacitance charging and generation/recombination currents are described. Applications of this technique for the analysis of barrier quality in solar cells and particle detectors fabricated on silicon material are demonstrated.

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Section: Fluence Temperature and External Steady-state Bias-dependesupporting

confidence: 86%

Section: Charge Injection Beliv Regimementioning

confidence: 99%

Section: Fluence Temperature and External Steady-state Bias-dependementioning

confidence: 99%

See 1 more Smart Citation

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Gaubas

Čeponis

Kalendra

et al. 2012

ISRN Materials Science

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“…However, it is possible only for diodes irradiated with fluences ≤10 14 n cm −2 . For diodes irradiated with fluences >10 15 cm −2 , due to which the carrier recombination lifetimes are shortened to a few ns or hundreds of picoseconds [13], the barrier capacitance values decrease approaching that of the geometrical capacitance. For reduced temperatures (to about 170 K), BELIV transients measured on diodes irradiated with a neutron fluence of 10 16 n cm −2 ( Fig.…”

Section: Variation Of Characteristics With Irradiation Fluence and Tementioning

confidence: 99%

Fluence dependent variations of barrier charging and generation currents in neutron and proton irradiated Si particle detectors

Gaubas¹,

Čeponis²,

Sakalauskas³

et al. 2011

Lith. J. Phys.

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The stability of the potential barrier is an essential characteristic in high energy particle detector operation under irradiation conditions. In this work a technique for barrier evaluation by linearly increasing voltage (BELIV) is presented, based on analysis of current transients measured at reverse biasing. The technique has been applied to diodes irradiated by neutrons and protons with fluences in the range of 10 12 -10 16 cm −2 in 1 MeV neutron equivalent. Fluence and temperature dependent characteristics of the diode barrier capacitance as well as of generation current are discussed.

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“…This result is in agreement with a characteristic evaluated directly from excess carrier decay transients in the same material. 16 The presented in FIG. 4 characteristics enable one to estimate variations of the excess carrier drift and trapping parameters.…”

Section: A Examination Of Icdc Transients By Using the Lowest Excitamentioning

confidence: 99%

Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures

2011

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Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure

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Spectroscopy of neutron irradiation induced deep levels in silicon by microwave probed photoconductivity transients

Cited by 9 publications

References 6 publications

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Fluence dependent variations of barrier charging and generation currents in neutron and proton irradiated Si particle detectors

Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures

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